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onsemi 600 mA NPN Bipolar Transistor TO-92 Package 3-Pin 160 V 2N5551BU

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onsemi 600 mA NPN Bipolar Transistor TO-92 Package 3-Pin 160 V 2N5551BU

Name: onsemi 600 mA NPN Bipolar Transistor TO-92 Package 3-Pin 160 V 2N5551BU
Brand: onsemi
SKU: 106836
Price: 0.07 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	20.95mm
Length	5.2mm
Model	2N5551BU
Width	4.19mm
Mount Type	Through Hole
Series	2N5551
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	160V
Minimum DC Current Gain hFE	80
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	180V
Maximum Power Dissipation Pd	625mW
Maximum DC Collector Current Idc	600mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

The transistor is single configuration with 3 pins for through-hole mounting.
It supports a maximum collector base voltage of 180 V and emitter base voltage of 6 V.
The device dissipates up to 625 mW power and operates between -55°C and 150°C.
It has a minimum DC current gain of 80 and a maximum transition frequency of 100 MHz.
The transistor dimensions are 20.95 mm height, 5.2 mm length, and 4.19 mm width.
Designed as a small signal transistor suitable for various electronic component applications.
Ideal for industrial, laboratory, and electronic circuit design uses requiring reliable switching and amplification.

Product Description

onsemi 2N5551BU is a small signal NPN bipolar junction transistor (BJT) designed for use in electronic circuit applications. It can handle a maximum DC collector current of 600 mA and has a high maximum collector-emitter voltage rating of 160 V, making it suitable for moderate power switching and amplification tasks.

The transistor is packaged in a TO-92 case with 3 pins configured for standard through-hole PCB mounting, offering ease of assembly in both prototyping and production environments. It features a single transistor configuration with a minimum DC current gain (hFE) of 80 and a maximum transition frequency of 100 MHz, ensuring fast switching and signal amplification capabilities.

This device supports a maximum collector base voltage of 180 V and a maximum emitter base voltage of 6 V with a power dissipation capacity of 625 mW. The operational temperature range extends from -55°C to 150°C, enabling reliable performance in a wide range of industrial and laboratory conditions.

With physical dimensions of 20.95 mm height, 5.2 mm length, and 4.19 mm width, the component fits compact designs requiring durable and precise transistor operation. It is free from industry certifications but is widely used for small signal applications in electronic modules and circuits.

The transistor is a reliable solution for switching and amplification in electronic circuits. The TO-92 package allows for easy through-hole PCB mounting and integration. Its broad operating temperature range suits industrial and commercial electronic use.

Compact size and solid specifications meet laboratory and manufacturing requirements. This component supports applications in power management, amplification, and signal processing.

onsemi products like the 2N5551BU are recognized in the electronics industry for their performance and reliability. They find extensive use in industrial electronics, laboratory instruments, and various electronic component assemblies.

Explore the Semiconductor category at EnvMart for more advanced electronic component solutions from onsemi and other trusted brands.

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