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onsemi PNP Transistor , Maximum DC Collector Current -100 mA, Collector Emitter Voltage -65 V, 3-Pin SOT-723 BC856BM3T5G

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onsemi PNP Transistor , Maximum DC Collector Current -100 mA, Collector Emitter Voltage -65 V, 3-Pin SOT-723 BC856BM3T5G

Name: onsemi PNP Transistor , Maximum DC Collector Current -100 mA, Collector Emitter Voltage -65 V, 3-Pin SOT-723 BC856BM3T5G
Brand: onsemi
SKU: 106648
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.55mm
Length	1.25mm
Model	BC856BM3T5G
Width	0.85mm
Mount Type	Surface
Series	BC856BM3
Maximum Operating Temperature	150°C
Package Type	SOT-723
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-65V
Minimum DC Current Gain hFE	220
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	-80V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	265mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

This transistor supports a maximum power dissipation of 265 mW.
It has a minimum DC current gain (hFE) of 220, ensuring efficient amplification.
The maximum transition frequency (ft) is 100 MHz, suitable for high-frequency applications.
The device complies with the AEC-Q101 automotive standard, indicating reliability in automotive environments.
It operates reliably over a temperature range from -55°C to 150°C.
The transistor polarity is PNP, commonly used in switching and amplification circuits.
Mount type is surface mount, facilitating easy PCB assembly.

Product Description

onsemi BC856BM3T5G is a general-purpose PNP bipolar transistor designed for various electronic applications requiring a collector current up to -100 mA and a collector emitter voltage rating of -65 V. This device is supplied in a 3-pin SOT-723 surface mount package, known for its small footprint and ease of use in modern PCB layouts.

The transistor features a minimum DC current gain (hFE) of 220 and a maximum power dissipation of 265 mW, making it suitable for amplification and switching tasks in low to medium power circuits. Its high transition frequency of 100 MHz supports operations in high-frequency signal processing applications.

Designed to operate between -55°C and 150°C, the BC856BM3T5G is robust for industrial and automotive uses. It meets the AEC-Q101 automotive qualification standard, ensuring durability and reliability under automotive environmental stresses.

Physical dimensions of the package are compact with a length of 1.25 mm, width of 0.85 mm, and height of 0.55 mm, allowing integration in space-constrained electronic systems. The surface mount package type facilitates automated PCB assembly and reflow soldering processes.

This PNP transistor is ideal for general-purpose applications, including switching and amplification in automotive, industrial, and consumer electronic circuits. The automotive standard compliance expands its suitability for embedded automotive control systems.

Its low power dissipation and high gain provide energy-efficient operation in battery-powered devices. The surface mount design supports high-density PCB layouts and modern manufacturing techniques. Compact size supports miniaturization in electronic device design.

For designers and engineers seeking reliable PNP transistor solutions, the onsemi BC856BM3T5G offers a balanced feature set with automotive-grade qualification. Explore the Semiconductor category on EnvMart for a wide range of compatible and complementary components tailored to your application needs.

Explore more products in our Bipolar Transistors category.