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onsemi Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-323 BC847AWT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model BC847AWT1G
Width 1.35mm
Mount Type Surface
Series BC847AW
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor supports a maximum DC collector current of 100 mA.
  • It has a maximum collector-emitter voltage rating of 45 V.
  • The device features a compact 3-pin SOT-323 surface mount package.
  • It offers a minimum DC current gain (hFE) of 110 for efficient amplification.
  • The maximum power dissipation is rated at 150 mW.
  • This transistor can operate from a minimum temperature of -55°C up to a maximum of 150°C.
  • It is designed with an NPN configuration and a maximum transition frequency of 100 MHz.
  • The device meets the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

Product Description

onsemi BC847AWT1G is a high-quality small signal NPN bipolar transistor suitable for various electronic applications. It delivers a maximum DC collector current of 100 mA and can withstand a collector-emitter voltage up to 45 V, making it ideal for low power switching and amplification tasks.

This transistor is housed in a compact 3-pin SOT-323 surface mount package, providing a compact footprint suitable for modern PCB layouts, including industrial, automotive, and consumer electronics assemblies.

The device is designed for durability and performance with a maximum power dissipation rating of 150 mW. It operates efficiently within a wide thermal range from -55°C to 150°C, incorporating protection against extreme operating environments.

Boasting a minimum DC current gain (hFE) of 110 and a maximum transition frequency of 100 MHz, the BC847AWT1G transistor is optimized for high-frequency applications requiring reliable signal amplification.

This semiconductor device conforms to the automotive AEC-Q101 standard, certifying its robustness for use in automotive electronic control units and systems. This transistor supports a maximum DC collector current of 100 mA.

It has a maximum collector-emitter voltage rating of 45 V. The device features a compact 3-pin SOT-323 surface mount package. It offers a minimum DC current gain (hFE) of 110 for efficient amplification. The maximum power dissipation is rated at 150 mW.

This transistor can operate from a minimum temperature of -55°C up to a maximum of 150°C. It is designed with an NPN configuration and a maximum transition frequency of 100 MHz. The device meets the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

Pin count is 3 with package dimensions approximately 2.2 mm length, 1.35 mm width, and 1 mm height. Suitable for discrete semiconductor use in electronic components and power connector systems.

Applications for the BC847AWT1G include signal switching and amplification in industrial controls, automotive electronics, consumer electronics, instrumentation, and communication equipment.

Explore more semiconductor and bipolar transistor products from onsemi and enhance your designs with reliable components available at EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-323 BC847AWT1G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

This model has a maximum collector-emitter voltage rating of 45 V.

The dimensions of the SOT-323 package are approximately 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

It offers a minimum DC current gain (hFE) of 110.

The maximum power dissipation for this transistor is rated at 150 mW.

This transistor can operate within a temperature range from -55°C to 150°C.

This device is designed with an NPN configuration.

The maximum transition frequency is 100 MHz.

It meets the AEC-Q101 automotive standard, ensuring reliability for automotive applications.

The maximum emitter-base voltage (VEBO) is 6 V.

This model is suitable for signal switching and amplification in industrial controls, automotive electronics, consumer electronics, instrumentation, and communication equipment.

The transistor features a pin count of 3.

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