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Vishay Si7615ADN Type P-Channel MOSFET 35 A 20 V Enhancement Mode 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.4mm |
| Model | SI7615ADN-T1-GE3 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | Si7615ADN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead (Pb)-Free |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 0.0044Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 59nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -1.1V |
Key Features
- The MOSFET features enhancement mode operation for efficient switching.
- Continuous drain current rating of 35 amperes supports high power applications.
- Maximum drain-source voltage of 20 volts ensures robust device performance.
- Low drain-source resistance of 0.0044 ohms lowers conduction losses.
- Maximum power dissipation of 52 watts allows reliable thermal management.
- Gate charge typically 59 nanocoulombs at 5 volts gate-source voltage.
- Maximum gate-source voltage of ±12 volts enhances device protection.
- Forward voltage rating of -1.1 volts suitable for P-channel operation.
Product Description
Vishay SI7615ADN-T1-GE3 is a Type P-Channel MOSFET designed for high efficiency and reliable performance in power switching applications. It features an enhancement mode channel with a continuous drain current rating of 35 amperes and a maximum drain-source voltage of 20 volts. Packaged in a compact 8-pin PowerPAK 1212-8 surface mount package, it optimizes board space while facilitating thermal dissipation.
This MOSFET offers a low drain-source resistance of 0.0044 ohms, minimizing conduction losses and improving overall device efficiency. Its maximum power dissipation rating of 52 watts supports robust operation in demanding environments. The gate charge of 59 nanocoulombs at 5 volts gate-source ensures fast switching, while the maximum gate-source voltage of ±12 volts provides enhanced gate protection.
The device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for industrial and automotive electronic applications not requiring specific automotive certification. Its compact physical dimensions of 3.4 mm length and width, with a height of 1.12 mm, allow designers to implement dense PCB layouts.
This lead (Pb)-free MOSFET complies with environmental standards and is supplied on reels for automated assembly in manufacturing. Typical applications include power management in portable devices, battery-powered electronics, DC-DC converters, and other discrete semiconductor circuits in industrial, laboratory, and commercial electronics.
Enhancement mode P-channel operation with 35 A continuous drain current. Maximum drain-source voltage rated at 20 V. Low on-resistance of 0.0044 ohms for efficient conduction. Compact PowerPAK 1212-8 surface mount package with 8 pins.
Robust power dissipation capacity of 52 W. Wide operating temperature range from -55°C to +150°C. Typical gate charge 59 nC at 5 V gate voltage enables fast switching. Maximum gate voltage of 12 V ensures device safety. Lead (Pb)-free construction supporting RoHS compliance.
Suitable for industrial, laboratory, commercial, and electronics manufacturing applications. Explore the Electronics & Electricals category at EnvMart for related Vishay MOSFETs and semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 amperes.
This MOSFET has a maximum drain-source voltage rating of 20 volts.
It features a low drain-source resistance of 0.0044 ohms, which helps minimize conduction losses.
The maximum power dissipation capacity of this unit is 52 watts.
The typical gate charge at a 5 volts gate-source voltage is 59 nanocoulombs.
The maximum gate-source voltage for this model is ±12 volts, providing enhanced device protection.
This model has dimensions of 3.4 mm in length and width, with a height of 1.12 mm.
It operates reliably across a wide temperature range from -55°C to 150°C.
This model is designed for surface mounting in a compact 8-pin PowerPAK 1212-8 package.
The forward voltage rating is -1.1 volts, which is suitable for P-channel operation.
This device is lead (Pb)-free and complies with environmental standards.
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