Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Vishay SiA461DJ Type P-Channel MOSFET, 12 A, 20 V Enhancement Mode, 6-Pin SC-70 SIA461DJ-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 0.8mm
Length 1.7mm
Model SIA461DJ-T1-GE3
Width 1.7mm
Mount Type Surface
Series SiA461DJ
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 12A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 55mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 17.9W
Typical Gate Charge Qg @ Vgs 30nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf -1.2V

Key Features

  • This MOSFET operates in enhancement mode for efficient switching.
  • Maximum continuous drain current is rated at 12 amperes.
  • Low drain-source resistance of 55 milliohms reduces power loss.
  • Package dimensions are compact with 1.7 mm length and width, and 0.8 mm height.
  • Maximum power dissipation capability is 17.9 watts.
  • Wide operating temperature range from −55°C to 150°C ensures reliability.
  • Maximum gate-source voltage rating of 8 volts supports control flexibility.
  • Typical gate charge of 30 nanocoulombs improves switching performance.

Product Description

Vishay SIA461DJ-T1-GE3 is a P-Channel MOSFET designed for semiconductor applications requiring robust switching and power efficiency. This type P enhancement-mode MOSFET supports a maximum continuous drain current of 12 amperes and a maximum drain-source voltage of 20 volts, housed in a compact 6-pin SC-70 surface-mount package with dimensions of 1.7 mm by 1.7 mm by 0.8 mm. It features a low drain-source resistance of 55 milliohms, which contributes to minimizing conduction losses and enhancing energy efficiency.

The device is rated for a maximum power dissipation of 17.9 watts, supporting thermal stability across an operating temperature range from −55°C to 150°C. The typical gate charge is 30 nanocoulombs at a gate-source voltage of 8 volts, providing fast switching suitable for high-frequency applications. A forward voltage of −1.2 volts supports optimized conduction when the MOSFET is active.

This MOSFET is ideal for use in industrial, electronic, and power management systems, including power supplies, battery management, motor control, and other embedded systems requiring reliable and energy-efficient operation. Surface mount packaging facilitates automated assembly processes in manufacturing.

This MOSFET operates in enhancement mode for efficient switching. Maximum continuous drain current is rated at 12 amperes. Low drain-source resistance of 55 milliohms reduces power loss. Package dimensions are compact with 1.7 mm length and width, and 0.8 mm height.

Maximum power dissipation capability is 17.9 watts. Wide operating temperature range from −55°C to 150°C ensures reliability. Maximum gate-source voltage rating of 8 volts supports control flexibility. Typical gate charge of 30 nanocoulombs improves switching performance.

Forward voltage drop is −1.2 volts optimized for conduction. Surface mount package supports automated manufacturing processes. Explore more semiconductor components and MOSFETs at EnvMart for your industrial and electronic design needs.

Vishay SiA461DJ Type P-Channel MOSFET, 12 A, 20 V Enhancement Mode, 6-Pin SC-70 SIA461DJ-T1-GE3
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is rated at 12 amperes.

This MOSFET supports a maximum drain-source voltage of 20 volts.

The package dimensions are 1.7 mm in length, 1.7 mm in width, and 0.8 mm in height.

The operating temperature range is from −55°C to 150°C.

The typical gate charge is 30 nanocoulombs at a gate-source voltage of 8 volts.

The maximum power dissipation capability is 17.9 watts.

It features a P-Channel type channel.

The low drain-source resistance is rated at 55 milliohms.

The forward voltage drop is −1.2 volts, optimized for conduction.

The SC-70 package has a pin count of 6.

This model uses a surface mount type.

This MOSFET is suitable for applications in power supplies, battery management, motor control, and other embedded systems requiring energy-efficient operation.

Related Products

Other Products from this brand

$0.30
$0.29 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.30
$0.29
Tax included