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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 0.8mm |
| Length | 1.7mm |
| Model | SIA461DJ-T1-GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | SiA461DJ |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 17.9W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | -1.2V |
Vishay SIA461DJ-T1-GE3 is a P-Channel MOSFET designed for semiconductor applications requiring robust switching and power efficiency. This type P enhancement-mode MOSFET supports a maximum continuous drain current of 12 amperes and a maximum drain-source voltage of 20 volts, housed in a compact 6-pin SC-70 surface-mount package with dimensions of 1.7 mm by 1.7 mm by 0.8 mm. It features a low drain-source resistance of 55 milliohms, which contributes to minimizing conduction losses and enhancing energy efficiency.
The device is rated for a maximum power dissipation of 17.9 watts, supporting thermal stability across an operating temperature range from −55°C to 150°C. The typical gate charge is 30 nanocoulombs at a gate-source voltage of 8 volts, providing fast switching suitable for high-frequency applications. A forward voltage of −1.2 volts supports optimized conduction when the MOSFET is active.
This MOSFET is ideal for use in industrial, electronic, and power management systems, including power supplies, battery management, motor control, and other embedded systems requiring reliable and energy-efficient operation. Surface mount packaging facilitates automated assembly processes in manufacturing.
This MOSFET operates in enhancement mode for efficient switching. Maximum continuous drain current is rated at 12 amperes. Low drain-source resistance of 55 milliohms reduces power loss. Package dimensions are compact with 1.7 mm length and width, and 0.8 mm height.
Maximum power dissipation capability is 17.9 watts. Wide operating temperature range from −55°C to 150°C ensures reliability. Maximum gate-source voltage rating of 8 volts supports control flexibility. Typical gate charge of 30 nanocoulombs improves switching performance.
Forward voltage drop is −1.2 volts optimized for conduction. Surface mount package supports automated manufacturing processes. Explore more semiconductor components and MOSFETs at EnvMart for your industrial and electronic design needs.
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