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onsemi Transistor NPN Small Signal 100 mA 12 V 3-Pin SOT-23 BSV52LT1G

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onsemi Transistor NPN Small Signal 100 mA 12 V 3-Pin SOT-23 BSV52LT1G

Name: onsemi Transistor NPN Small Signal 100 mA 12 V 3-Pin SOT-23 BSV52LT1G
Brand: onsemi
SKU: 105798
Price: 0.06 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	BSV52LT1G
Width	2.64mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	12V
Minimum DC Current Gain hFE	25
Transistor Polarity	NPN
Maximum Collector Base Voltage VCBO	20V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

This transistor comes in a compact 3-pin SOT-23 package suitable for surface mount technology.
It supports a maximum power dissipation of 225 mW allowing moderate power handling.
The minimum DC current gain (hFE) rating is 25, ensuring reliable amplification.
It operates efficiently within temperature ranges from -55°C to 150°C.
The high transition frequency of 100 MHz makes it suitable for high-speed switching.
The transistor has a single configuration and NPN polarity suitable for multiple circuit designs.
The small physical dimensions (3.04 mm length, 2.64 mm width, 1.11 mm height) optimize PCB space.

Product Description

onsemi BSV52LT1G is a small signal NPN bipolar transistor designed for general electronic applications including switching and amplification. It features a maximum DC collector current (Idc) of 100 mA and a maximum collector emitter voltage (Vceo) of 12 V, making it suitable for low power circuits.

The transistor package is a 3-pin SOT-23 surface mount type, which offers a compact footprint beneficial for high-density PCB layouts in industrial, commercial, and consumer electronics.

This device can dissipate power up to 225 mW, with a minimum DC current gain (hFE) of 25 and operates reliably across a wide temperature span from -55°C to 150°C. Additionally, the maximum transition frequency (ft) of 100 MHz allows for effective high frequency response in amplifier or switching stages.

The BSV52LT1G has a single transistor configuration with NPN polarity, suitable for various semiconductor applications. This transistor comes in a compact 3-pin SOT-23 package suitable for surface mount technology. It supports a maximum power dissipation of 225 mW allowing moderate power handling.

The minimum DC current gain (hFE) rating is 25, ensuring reliable amplification. It operates efficiently within temperature ranges from -55°C to 150°C. The high transition frequency of 100 MHz makes it suitable for high-speed switching.

The transistor has a single configuration and NPN polarity suitable for multiple circuit designs. The small physical dimensions (3.04 mm length, 2.64 mm width, 1.11 mm height) optimize PCB space.

This product is widely used in electronic circuits for signal amplification and switching in industrial, laboratory, commercial, and consumer electronics. Its reliable specifications meet the requirements for many semiconductor design applications.

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