onsemi Transistor 16 A NPN 250 V 3-Pin TO-3BPL MJL21194G

onsemi MJL21194G is a high-power NPN bipolar transistor engineered for applications requiring reliable power amplification and switching. Its design supports a maximum DC collector current of 16 A and a collector emitter voltage rating of 250 V, making it ideal for demanding industrial, electronic, and power management systems.

The transistor comes in a sturdy 3-pin TO-3BPL package type with through-hole mounting, enhancing mechanical stability and ease of installation in various electronic assemblies. It operates safely over a wide temperature range from -65°C to 150°C, offering durability under harsh environmental and operational conditions.

With a maximum power dissipation rating of 200 W, the MJL21194G can withstand significant thermal loads in industrial power circuits. The minimum DC current gain (hFE) of 25 provides effective current amplification, while its maximum transition frequency of 1 MHz supports moderate speed switching requirements.

The device's physical dimensions (height 47.8 mm, length 20.3 mm, width 5.3 mm) allow for precise placement on electronic boards. Its NPN configuration is versatile for many applications including power amplifiers, audio amplifiers, and signal processing. The transistor has three pins for electrical connections, simplifying integration in circuit designs.

This transistor is suitable for industrial equipment, power electronics, laboratory instrumentation, and HVAC control systems. Its robust specifications make it a reliable choice for engineers and technicians focusing on performance and longevity.

The transistor features a maximum DC collector current of 16 A. It supports a maximum collector emitter voltage of 250 V for robust operation. Equipped with a TO-3BPL through-hole package type, ensuring mechanical durability.

Operates reliably in temperature ranges from -65°C to 150°C. Offers a maximum power dissipation of 200 W for high-performance power handling. Has a minimum DC current gain (hFE) of 25, ensuring strong amplification. The device has a maximum transition frequency of 1 MHz, suitable for switching tasks.

NPN transistor polarity suited for various electrical circuit designs. Dimensions include height 47.8 mm, length 20.3 mm, and width 5.3 mm for precise mounting. Pin count is 3 for straightforward electrical connections. Explore the full range of onsemi Bipolar Transistors and high-performance semiconductors available on EnvMart for your electronic component sourcing needs.