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DiodesZetex PNP Transistor 600 mA, 40 V, 3-Pin SOT-23 MMBT4403-7-F

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DiodesZetex PNP Transistor 600 mA, 40 V, 3-Pin SOT-23 MMBT4403-7-F

Name: DiodesZetex PNP Transistor 600 mA, 40 V, 3-Pin SOT-23 MMBT4403-7-F
Brand: DiodesZetex
SKU: 104420
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.25mm
Length	3mm
Model	MMBT4403-7-F
Width	2.5mm
Mount Type	Surface
Series	MMBT4403
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-40V
Minimum DC Current Gain hFE	20
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	-40V
Automotive Standard	AEC-Q200, AEC-Q100, AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	-600mA
Transistor Configuration	Single
Maximum Transition Frequency ft	200MHz

Key Features

Surface mount package type SOT-23 with 3 pins.
Maximum power dissipation of 300 mW suitable for low power circuits.
Transistor polarity is PNP with single transistor configuration.
Wide operating temperature range from -55°C to 150°C.
Minimum DC current gain (hFE) of 20, ensuring adequate amplification.
Maximum transition frequency of 200 MHz for high-frequency applications.
Complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101 for robust quality.
Manufactured in China and supplied in reel packaging ready for insertion into machinery.

Product Description

DiodesZetex MMBT4403-7-F is a high-performance PNP bipolar transistor designed for switching and amplification tasks in electronic circuits. Featuring a compact 3-pin SOT-23 surface mount package, it supports a maximum DC collector current of 600 mA and a maximum collector-emitter voltage of 40 V.

This transistor is suitable for low power dissipation applications with its 300 mW power rating and operates efficiently over a wide temperature range from -55°C up to 150°C. The minimum DC current gain (hFE) of 20 provides sufficient signal amplification capability.

The maximum transition frequency of 200 MHz allows this transistor to perform well in high-frequency environments. Physical dimensions include a length of 3 mm, width of 2.5 mm, and height of 1.25 mm, making it ideal for compact PCB designs.

Meeting automotive standards AEC-Q200, AEC-Q100, and AEC-Q101, this transistor ensures reliability and quality for automotive and industrial applications. It is manufactured in China and typically supplied on reels for efficient automated processing in manufacturing environments.

Surface mount SOT-23 package for compact design. 600 mA maximum collector current and 40 V maximum voltage ratings. Low power dissipation of 300 mW supports small signal usage. Wide operating temperature range from -55°C to 150°C.

Minimum current gain of 20 ensures robust amplification. High transition frequency up to 200 MHz enables fast switching. Automotive-grade reliability with AEC-Q certifications. Dimensions suited for space-constrained PCB layouts.

Manufactured in China, supplied on reels.

This transistor is widely used in industrial electronics, automotive control systems, consumer electronics, and communication devices. It is especially suited for applications requiring dependable switching and signal amplification under demanding conditions. Explore compatible components and accessories in the Electronics & Electricals Semiconductors category on EnvMart.

Explore more products in our Bipolar Transistors category.