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DiodesZetex Bipolar Transistor PNP 500 mA, 350 V, 3-Pin SOT-23 DP350T05-7

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DP350T05-7
Width 2.5mm
Mount Type Surface
Series DP350T05
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -350V
Minimum DC Current Gain hFE 15
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -350V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single

Key Features

  • This transistor features surface mount technology suitable for compact electronic designs.
  • Maximum power dissipation rating is 300 mW, providing reliable performance in low-power applications.
  • Operating temperature ranges from -55°C to 150°C ensuring durability under varied conditions.
  • Has a minimum DC current gain hFE of 15 enhancing signal amplification.
  • Suitable for use in automotive applications compliant with AEC-Q101 standard.
  • Designed as a single transistor configuration with PNP polarity for diverse circuit implementations.

Product Description

The DiodesZetex DP350T05-7 bipolar transistor is a high voltage, PNP polarity transistor designed for compact electronic circuit applications. This transistor belongs to the DP350T05 series, equipped to handle a maximum DC collector current of 500 mA and withstand collector emitter voltages up to 350 V. It is housed in a 3-pin SOT-23 package, optimizing it for surface mount technology circuits where space savings and reliability are paramount.

Operating across a broad temperature range of -55°C to 150°C, this device ensures stable performance in varied environmental conditions including automotive grade scenarios, compliant with the automotive AEC-Q101 standard. The maximum power dissipation of 300 mW makes it appropriate for low power electronic circuits, providing efficient signal amplification with a minimum DC current gain (hFE) of 15. With maximum collector base voltage and emitter base voltage at -350 V and -5 V respectively, the transistor is suitable for diverse switching and amplification tasks.

Its compact physical dimensions (1.1 mm height, 2.5 mm width, and 3 mm length) enable designers to implement high-density PCB layouts without compromising on thermal or electrical performance. Primarily used in electronic components manufacturing, power and connectors equipment, this transistor suits applications ranging from industrial electronics to automotive systems, laboratory instruments, and HVAC controls.

This transistor supports surface mount mounting for ease of assembly and integration. The PNP transistor configuration allows its use in various signal amplification and switching circuits. Compliance with automotive standards ensures robustness for automotive electronics applications.

Ideal for electronics manufacturers requiring reliable high voltage and current transistors in compact form factors. Device meets no additional standards/approvals beyond AEC-Q101 but maintains high quality and performance criteria.

Its electrical and mechanical properties make it suitable for industrial, laboratory, and manufacturing environments. Offers excellent balance between voltage handling capability and compact board space occupation. Explore more products in the Bipolar Transistors category at EnvMart for reliable semiconductor solutions tailored to your industrial and commercial projects.

DiodesZetex Bipolar Transistor PNP 500 mA, 350 V, 3-Pin SOT-23 DP350T05-7
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Frequently Asked Questions

The maximum DC collector current for the DiodesZetex DP350T05-7 is 500 mA.

This model has a maximum collector-emitter voltage rating of -350 V.

The minimum DC current gain (hFE) for the DP350T05-7 is 15.

The operating temperature range for this unit is from -55°C to 150°C.

It is housed in a 3-pin SOT-23 package, suitable for surface mount technology.

The maximum power dissipation rating for this transistor is 300 mW.

The dimensions of the DP350T05-7 are 1.1 mm in height, 2.5 mm in width, and 3 mm in length.

This transistor is compliant with the AEC-Q101 automotive standard.

This model is designed as a single transistor configuration with PNP polarity.

The maximum emitter-base voltage (VEBO) for this unit is -5 V.

It is suitable for use in automotive applications, industrial electronics, laboratory instruments, and HVAC controls.

This transistor supports surface mount mounting for ease of assembly and integration.

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