Vishay SiHG039N60EF N-Channel MOSFET, 61 A, 600 V, Enhancement Mode, 3-Pin TO-247 SIHG039N60EF-GE3

The Vishay SIHG039N60EF-GE3 is a high-performance N-Channel MOSFET designed to handle demanding power applications with a maximum continuous drain current of 61 A and a drain-source voltage rating of 600 V. It features a low on-resistance (Rds) of 40 milliohms, which ensures high efficiency in switching operations and reduced heat generation. The device utilizes advanced 4th generation EF series technology characterized by a low figure-of-merit (Ron x Qg) and low effective capacitance, boosting overall performance in power management circuits.

This MOSFET is housed in a durable 3-pin TO-247 package suitable for through-hole mounting, offering excellent thermal dissipation capabilities with a maximum power rating of 357 W. Its maximum operating temperature is rated up to 150°C, with a minimum operational temperature threshold of -55°C, supporting a wide range of industrial and commercial applications.

Typical gate charge of 84 nanocoulombs at gate-source voltage and a maximum gate-source voltage of ±30 V enable fast switching and gate drive compatibility. The device exhibits an enhancement-mode channel type ensuring stable and predictable operation, specifically optimized for use in server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) units.

Applications for the SIHG039N60EF-GE3 span diverse industrial sectors including telecommunications, computing, and power management systems where efficiency and reliability are paramount. Although it lacks automotive-specific certification, its performance characteristics suit many general power electronics needs.

Features low on-resistance (40 milliohms) for efficient power dissipation. Supports maximum continuous drain current of 61 amperes. Operates at a maximum drain-source voltage of 600 volts. Includes a typical gate charge of 84 nanocoulombs at Vgs.

High maximum power dissipation of 357 watts for demanding loads. Maximum operating temperature rated at 150 degrees Celsius. Robust package type TO-247 for through-hole mounting. Designed with enhancement mode channel for reliable switching.

The Vishay SIHG039N60EF-GE3 MOSFET enhances power switching efficiency and thermal management, making it a dependable choice for industrial and commercial electronic designs. Browse related MOSFETs and semiconductor products at EnvMart for comprehensive device selection and solutions.