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onsemi Digital Transistor N-Channel Surface Mount TSOT-23 6-Pin, 1.6W Power Dissipation FDC8601

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onsemi Digital Transistor N-Channel Surface Mount TSOT-23 6-Pin, 1.6W Power Dissipation FDC8601

Name: onsemi Digital Transistor N-Channel Surface Mount TSOT-23 6-Pin, 1.6W Power Dissipation FDC8601
Brand: onsemi
SKU: 101832
Price: 0.96 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	3mm
Model	FDC8601
Width	1.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TSOT-23
Standards/Approvals	RoHS
Pin Count	6
Transistor Polarity	N-Channel
Maximum Power Dissipation Pd	1.6W

Key Features

This N-Channel MOSFET features advanced Power Trench® technology for enhanced switching and ruggedness.
The transistor supports maximum operating temperature up to 150°C for reliable use in harsh environments.
Compact TSOT-23 package with dimensions 3 mm length, 1.7 mm width, and 1.1 mm height facilitates surface mounting.
Pin count of 6 allows flexible circuit integration in digital and power applications.
High current and power handling capability supports efficient circuit designs.
Optimized for low on-resistance with max rDS(on) of 109 mΩ at VGS=10 V and 176 mΩ at VGS=6 V.
RoHS compliant ensuring adherence to environmental regulations.

Product Description

onsemi FDC8601 is a high-performance Digital Transistor featuring N-Channel polarity in a TSOT-23 6-pin surface mount package. It offers a maximum power dissipation of 1.6W and is designed for efficient switching and robust operation in various electronic circuits. With dimensions of 3 mm length, 1.7 mm width, and 1.1 mm height, this transistor supports automated surface mounting, optimized for compact PCB layouts.

This transistor utilizes advanced Power Trench® technology to minimize on-resistance, achieving a maximum rDS(on) of 109 mΩ at VGS=10 V and 176 mΩ at VGS=6 V, facilitating low power losses and enhanced thermal performance. The device can operate continuously at temperatures up to 150°C, making it suitable for demanding industrial, power management, and digital switching applications.

The 6-pin configuration offers versatility for circuit design, and the product complies with RoHS standards, ensuring environmentally responsible manufacturing. Typical applications include power switching circuits, digital control circuits, and power distribution modules in industrial and electronics sectors.

This N-Channel MOSFET features advanced Power Trench® technology for enhanced switching and ruggedness. The transistor supports maximum operating temperature up to 150°C for reliable use in harsh environments. Compact TSOT-23 package with dimensions 3 mm length, 1.7 mm width, and 1.1 mm height facilitates surface mounting.

Pin count of 6 allows flexible circuit integration in digital and power applications. High current and power handling capability supports efficient circuit designs. Optimized for low on-resistance with max rDS(on) of 109 mΩ at VGS=10 V and 176 mΩ at VGS=6 V.

RoHS compliant ensuring adherence to environmental regulations.

This product is ideally suited for a wide range of industrial, electronics manufacturing, power management, and control system applications. Explore more onsemiconductor devices and Bipolar Transistors in the EnvMart catalog for your electronic component sourcing needs.