onsemi PNP Bipolar Transistor 200 mA, 45 V, 150 mW Power, Surface Mount SOT-323, 3-Pin BC857CWT1G

onsemi BC857CWT1G is a PNP bipolar transistor designed primarily for general purpose amplifier applications. It is housed in a compact SOT-323 (SC-70) surface mount package, making it ideal for low power surface mount device (SMD) circuits requiring a compact footprint.

This transistor supports a maximum DC collector current of 200 mA and can withstand a maximum collector-emitter voltage of 45 V, suitable for various amplifier circuits and switching applications in electronics assembly.

The device features a minimum DC current gain (hFE) of 125, ensuring good signal amplification. Additionally, it supports a maximum power dissipation of 150 mW, balancing performance with thermal management in compact designs.

With pin count of three and PNP polarity, it fits common bipolar transistor roles in amplification and switching within industrial, automotive, and consumer end-use cases.

The transistor is specified for a broad operating temperature range from -55°C up to 150°C, enhancing reliability in demanding automotive and industrial environments. It meets the AEC-Q101 automotive qualification standard, ensuring compliance for automotive electronic modules.

Physically, the transistor measures 2.2 mm in length, 1.35 mm in width, and has a height of 0.9 mm. This compact form factor supports high density circuit board layouts. onsemi BC857CWT1G devices are Pb-free and comply with Halogen-Free and BFR-Free environmental standards, supporting green manufacturing requirements.

Typical applications include signal amplification, low power switching, and usage in automotive, industrial, telecommunications, and consumer electronics. Maximum DC collector current of 200 mA ensuring efficient current handling.

Maximum collector-emitter voltage rating of 45 V suitable for low power applications. Compact SOT-323 package with dimensions 2.2 mm length, 1.35 mm width, and 0.9 mm height. Surface mount design ideal for modern PCB assembly and compact device integration.

High DC current gain (hFE) minimum of 125 for reliable amplification performance. Wide operating temperature range from -55°C to 150°C for robust industrial and automotive use. Maximum power dissipation of 150 mW supporting low power applications with thermal safety.

Meets automotive standard AEC-Q101 ensuring suitability for automotive electronics. Pin count of 3 with PNP transistor polarity and single transistor configuration. Manufactured in China with Pb-Free and Halogen Free/BFR Free compliance.

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