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onsemi Small Signal PNP Bipolar Transistor, 3-Pin SOT-23, -100 mA, -30 V, 300 mW BC858BLT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC858BLT1G
Width 1.4mm
Mount Type Surface
Series BC856ALT1G
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 125
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
PNP transistor,BC858B 0.1ABrand ON Semiconductor

Key Features

  • This transistor supports a maximum power dissipation of 300 mW.
  • It provides a minimum DC current gain (hFE) of 125 for amplification efficiency.
  • The maximum transition frequency (ft) is rated at 100 MHz.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact dimensions with 3.04 mm length, 1.4 mm width, and 1.11 mm height.
  • Automotive qualified to AEC-Q101 standard for reliable performance in stringent environments.
  • Offers a maximum collector base voltage (VCBO) of 30 V and emitter base voltage (VEBO) of 5 V.
  • Single transistor configuration ideal for low signal amplification and switching applications.

Product Description

The onsemi BC858BLT1G is a reliable small signal PNP bipolar transistor housed in a compact 3-pin SOT-23 surface mount package. It features a maximum collector current of -100 mA and a maximum collector-emitter voltage of -30 V, making it suitable for low power amplification and switching tasks in electronic circuits.

This transistor offers a robust power dissipation capacity of 300 mW, enabling it to operate efficiently under typical electronic loads. With a minimum DC current gain of 125, it provides effective signal amplification in a wide range of applications including industrial electronics, automotive electronics, and consumer devices.

The device supports a high transition frequency of 100 MHz, supporting fast switching and high frequency operation. It operates reliably over a broad temperature range from -55°C to 150°C and complies with the automotive AEC-Q101 standard, ensuring durability and performance under demanding conditions.

Dimensional specifications of 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height allow for compact PCB layouts. The transistor configuration is single, suited for general-purpose signal processing needs.

Its surface mount package type and pin count of three make it easy to integrate into various electronic assemblies. The BC858BLT1G transistor is widely used in industrial control equipment, telecommunication devices, automotive systems, and general electronics manufacturing.

This transistor supports a maximum power dissipation of 300 mW. It provides a minimum DC current gain (hFE) of 125 for amplification efficiency. The maximum transition frequency (ft) is rated at 100 MHz. Wide operating temperature range from -55°C to 150°C.

Compact dimensions with 3.04 mm length, 1.4 mm width, and 1.11 mm height. Automotive qualified to AEC-Q101 standard for reliable performance in stringent environments. Offers a maximum collector base voltage (VCBO) of 30 V and emitter base voltage (VEBO) of 5 V.

Single transistor configuration ideal for low signal amplification and switching applications. Explore more onsemi transistors and semiconductors at EnvMart for industrial, automotive, and electronics applications.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal PNP Bipolar Transistor, 3-Pin SOT-23, -100 mA, -30 V, 300 mW BC858BLT1G
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Frequently Asked Questions

The maximum power dissipation of this transistor is 300 mW.

It provides a minimum DC current gain (hFE) of 125, which enhances amplification efficiency.

The maximum transition frequency (ft) is rated at 100 MHz, supporting fast switching operations.

This model has compact dimensions of 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

The maximum collector-emitter voltage (Vceo) is -30 V, making it suitable for low power applications.

It operates reliably over a wide temperature range from -55°C to 150°C.

The maximum collector base voltage (VCBO) is 30 V.

This transistor is housed in a compact 3-pin SOT-23 surface mount package.

It is qualified to the AEC-Q101 automotive standard for reliable performance in stringent environments.

The maximum emitter base voltage (VEBO) is 5 V.

This transistor features a single configuration, making it ideal for low signal amplification and switching applications.

The maximum collector current is -100 mA, suitable for low power amplification tasks.

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