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Infineon LogicFET Type N-Channel MOSFET 130 A 40 V Enhancement 3-Pin TO-220 IRL1004PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRL1004PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | LogicFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 130A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 100nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.3V |
| N-channel logicFET,IRL1004 130A 40VBrand | International Rectifier |
Key Features
- Continuous drain current capability up to 130 A ensures robust performance.
- Maximum drain-source voltage of 40 V suits medium-voltage circuits.
- Low on-resistance of 7 mΩ minimizes conduction losses and heat.
- High power dissipation rating of 200 W supports heavy-duty applications.
- Wide operating temperature range from -55°C to +175°C ensures reliability.
- Typical gate charge of 100 nC enables fast switching suitable for high-frequency use.
- Maximum gate-source voltage of 16 V protects device integrity.
- Compact 3-Pin TO-220 package allows straightforward through-hole mounting.
Product Description
Infineon IRL1004PBF is a LogicFET Type N-Channel Enhancement Mode MOSFET designed for efficient power management with a continuous drain current capacity of 130 A and a maximum drain-source voltage of 40 V. Packaged in a compact 3-pin TO-220 housing, this device offers low on-resistance of 7 mΩ and a maximum power dissipation rating of 200 W.
The wide operating temperature range from -55°C to +175°C ensures dependable performance in harsh industrial and automotive environments. Its low gate charge of 100 nC supports rapid switching for high-frequency applications in power supply circuits, energy management, and automotive automation systems.
The device requires appropriate thermal management, such as heatsinking, to maintain reliable operation under high power loads. Exceeding the maximum gate-source voltage of 16 V can cause device failure, emphasizing adherence to electrical limits.
This MOSFET's robust design and thermal stability make it highly suitable for industrial, automotive, and energy conversion applications where efficient switching and heat dissipation are critical.
Continuous drain current capacity up to 130 A. Maximum drain-source voltage 40 V. Low on-resistance (Rds(on)) of 7 mΩ reduces power losses. High power dissipation rating of 200 W. Operating temperature range from -55°C to +175°C.
Typical gate charge 100 nC for fast switching. Maximum gate-source voltage of 16 V for device protection. Compact TO-220 package supports through-hole mounting. Enhancement mode N-channel for efficient power control. Applications include industrial automation, power supplies, and automotive systems.
Explore more Infineon semiconductor components and MOSFETs at EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 130 A.
The maximum drain-source voltage of this MOSFET is 40 V.
It features a low on-resistance of 7 mΩ, which minimizes conduction losses.
The maximum power dissipation rating is 200 W, supporting heavy-duty applications.
This MOSFET operates within a temperature range of -55°C to +175°C.
The typical gate charge is 100 nC, which enables fast switching suitable for high-frequency applications.
The maximum gate-source voltage is 16 V, which protects the device integrity.
It is packaged in a compact 3-pin TO-220 housing, allowing straightforward through-hole mounting.
The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
This model is suitable for applications in industrial automation, power supplies, and automotive systems.
The channel type is N-channel, specifically designed for enhancement mode operation.
The forward voltage is 1.3 V.
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