$0.54
$0.53
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Microchip Type N-Channel MOSFET 280 mA 60 V Enhancement 3-Pin SOT-23 TN2106
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | TN2106 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | TN2106 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 280mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 360mW |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.8V |
Key Features
- This enhancement-mode transistor uses a vertical DMOS structure with silicon-gate processing.
- The device offers low threshold voltage and high input impedance.
- It supports a maximum power dissipation of 360 mW and operates from -55°C to 150°C.
- Fast switching speeds with low input capacitance enable efficient amplification and switching applications.
- Device package includes a compact 3-pin SOT-23 surface mount design.
- Maximum gate-source voltage rating is 20 V with a maximum drain-source resistance of 5 Ω.
- Features integral source-drain diode and thermal stability resistant to secondary breakdown.
- Commonly used in electronic circuits requiring reliable N-channel MOSFET switching components.
Product Description
Microchip TN2106 is a Type N-Channel MOSFET designed for use in low threshold and enhancement-mode applications.
Employing a vertical DMOS structure and advanced silicon-gate manufacturing, this device combines excellent power handling and high input impedance suitable for high-performance electronically switched circuits.
The MOSFET features a maximum continuous drain current of 280 mA and withstands a maximum drain-source voltage of 60 V, making it ideal for low power amplifier and switching applications.
It is packaged in a compact 3-pin SOT-23 surface-mount form factor with dimensions approximately 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height, facilitating integration in space-constrained electronics.
Vertical DMOS N-Channel Enhancement Mode design with fast switching capabilities. Maximum power dissipation of 360 mW ensures robust performance. Operates safely from -55°C to 150°C providing wide thermal range. Maximum gate-source voltage rated at 20 V with a low drain-source resistance (5 Ω) for efficiency.
Integral source-drain diode and thermal stability prevent secondary breakdown. This MOSFET is widely applicable in industrial, commercial, and electronic engineering sectors for signal amplification, switching, and power regulation tasks.
Explore our range of Microchip MOSFETs and other semiconductor devices at EnvMart to fulfill your electronics engineering project requirements.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 280 mA.
It has a maximum drain-source voltage rating of 60 V.
The maximum power dissipation capacity is 360 mW.
The TN2106 operates safely within a temperature range of -55°C to 150°C.
This model has dimensions of approximately 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum gate-source voltage rating is 20 V.
It is packaged in a compact 3-pin SOT-23 surface mount design.
The maximum drain-source resistance is 5 Ω.
It is commonly used in electronic circuits requiring reliable N-channel MOSFET switching components, such as signal amplification and power regulation tasks.
This model features a Type N channel and operates in enhancement mode.
The forward voltage for this MOSFET is 1.8 V.
It features thermal stability that is resistant to secondary breakdown.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$0.94
$0.91
-3%
New
$1.01
$0.98
-3%
New
Recently Viewed Products
$682.65
$662.17
-3%
New
$5.59
$5.42
-3%
New
$332.23
$322.27
-3%
New
$0.54
$0.53
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent