Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement Mode, 5-Pin TO-252 IPD200N15N3

Infineon IPD200N15N3 G Type N-Channel MOSFET is a state-of-the-art power transistor designed for high-current and high-voltage switching applications. With a maximum continuous drain current of 50 amperes and a drain-source voltage rating of 150 volts, this device suits a wide range of industrial, automotive, and consumer electronic applications requiring robust and efficient power management.

The device features an enhancement mode N-channel design with extremely low drain-source resistance of 20 milliohms, which significantly reduces energy loss during conduction. Packaged in a compact 5-pin TO-252 surface mount package, it allows for efficient PCB space utilization and reliable thermal performance with up to 150 watts power dissipation.

Operating temperature ranges from -55° C to 175° C ensure suitability in harsh environments. Additionally, the typical gate charge of 23 nC and maximum gate-source voltage of 20 V support fast switching and strong gate control, respectively, enhancing performance in switching power supplies, motor drives, and DC-DC converters.

Dimensions of 10.36 mm length, 9.45 mm width, and 4.57 mm height enable easy integration into various electronic systems. This MOSFET is ideal for applications in industrial automation, power electronics, automotive electronics, and consumer devices.

The IPD200N15N3 offers superior performance improvements with approximately 40% reduction in on-resistance and 45% improvement in figure of merit compared to competitors, facilitating transitions from leaded to SMD packages and consolidation of parts in complex circuits.

Features enhancement mode channel operation for efficient switching. Packaged in a compact 5-pin TO-252 surface mount package. Has a maximum drain-source resistance of 20 milliohms ensuring low conduction losses. Supports maximum power dissipation of 150 watts for demanding applications.

Operates reliably between -55° C and 175° C temperature range. Typical gate charge at 23 nC enables fast switching speeds. Maximum gate-source voltage rating is 20 volts. Forward voltage is approximately 1 volt contributing to efficient conduction.

Compact dimensions include 10.36 mm length, 9.45 mm width, and 4.57 mm height. Designed for surface mount technology for PCB assembly.

This product is a new item sourced from Infineon, made in compliance with industrial standards for semiconductor devices. It fits applications in industrial equipment, automotive systems, power management circuits, and consumer electronics requiring reliable MOSFET transistors.

Explore more Infineon MOSFETs and semiconductor components at EnvMart for advanced electronic system designs and efficient power solutions.