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Nexperia N-Channel MOSFET, 1 A, 100 V Enhancement Mode, 3-Pin SOT-23 Package PMV280ENEAR

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Nexperia N-Channel MOSFET, 1 A, 100 V Enhancement Mode, 3-Pin SOT-23 Package PMV280ENEAR

Name: Nexperia N-Channel MOSFET, 1 A, 100 V Enhancement Mode, 3-Pin SOT-23 Package PMV280ENEAR
Brand: Nexperia
SKU: 94994
Price: 0.22 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	PMV280ENEAR
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	1A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	892mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5W
Typical Gate Charge Qg @ Vgs	4.5nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This device features an enhancement-type channel mode, ideal for switching applications.
The MOSFET has a maximum drain-source resistance of 892 mΩ ensuring low conduction losses.
It supports a maximum power dissipation of 5 W and high operating temperature up to 150°C.
Designed with trench MOSFET technology for fast switching and logic-level compatibility.
The package provides ElectroStatic Discharge protection exceeding 2 kV.
Automotive standard AEC-Q101 qualified for reliability in stringent environments.
Typical gate charge at Vgs is 4.5 nC, supporting efficient operation.
The compact dimensions (3 mm length, 1.4 mm width, 1 mm height) enable PCB space saving.

Product Description

Nexperia PMV280ENEAR N-Channel MOSFET is a high-performance enhancement mode Field-Effect Transistor optimized for space- and power-critical industrial and automotive applications. It offers a continuous drain current of 1 A and can withstand drain-source voltages up to 100 V.

Constructed using trench MOSFET technology, this device provides logic-level compatibility and very fast switching capabilities, making it suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

The 3-pin SOT-23 surface-mounted device package ensures compact footprint and ease of integration into modern electronic designs. The part is qualified to the automotive AEC-Q101 standard, ensuring dependable operation under automotive stress conditions.

Key electrical characteristics include a maximum drain-source resistance of 892 mΩ, a maximum power dissipation rating of 5 W, and a maximum gate-source voltage of 20 V. The MOSFET can operate within a broad temperature range from -55°C to 150°C, making it versatile for harsh environments.

The device features ElectroStatic Discharge protection greater than 2 kV according to HBMA, safeguarding sensitive circuitry. Typical gate charge of 4.5 nC at Vgs further contributes to efficient switching performance.

This MOSFET supports applications in industrial, automotive, and consumer electronics requiring efficient switching. Its compact size and robust specifications allow for high-density PCB layouts and reliable operation. Equipped with surface mount technology for automated manufacturing processes.

Suitable for use in relay drivers, electronic switches, and various low-side load control applications. Ensures improved power efficiency and thermal performance through trench technology. Complies with automotive standards for enhanced quality assurance and durability.

Compatible with low voltage logic for straightforward gate drive interface.

Explore more semiconductor components and MOSFET devices at EnvMart for your industrial and electronic engineering needs. Leverage our comprehensive catalog to source quality parts for HVAC, manufacturing, laboratory, and automotive applications.