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Nexperia N-Channel 26 A 80 V Enhancement MOSFET, 4-Pin LFPAK Package BUK9M3580E

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Nexperia N-Channel 26 A 80 V Enhancement MOSFET, 4-Pin LFPAK Package BUK9M3580E

Name: Nexperia N-Channel 26 A 80 V Enhancement MOSFET, 4-Pin LFPAK Package BUK9M3580E
Brand: Nexperia
SKU: 94993
Price: 0.71 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	0.9mm
Length	3.4mm
Model	BUK9M3580E
Width	2.6mm
Mount Type	Surface
Series	BUK9M3580E
Maximum Operating Temperature	175°C
Package Type	LFPAK
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	26A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	88mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	62W
Typical Gate Charge Qg @ Vgs	13.5nC
Maximum Gate Source Voltage Vgs	15V

Key Features

This device features an enhancement mode channel with a low on-resistance of 88 mΩ.
It supports a maximum power dissipation of 62 W and operates at temperatures up to 175 °C.
Designed in a 4-pin LFPAK package with compact dimensions (3.4 mm length, 2.6 mm width, 0.9 mm height).
It complies with automotive standard AEC-Q101 and is repetitive avalanche rated.
Typical gate charge is 13.5 nC at Vgs, with maximum gate-source voltage of 15 V.
Offers robust operation in automotive environments including 12 V, 24 V, and 48 V systems.

Product Description

Nexperia BUK9M3580E is a high-performance N-Channel MOSFET designed for automotive and industrial uses, featuring a maximum continuous drain current of 26 A and maximum drain-source voltage of 80 V. It is housed in a compact 4-pin LFPAK package optimized for surface mounting.

This MOSFET operates in enhancement mode with a low maximum drain-source resistance of 88 mΩ, ensuring efficient power switching and minimal losses. The device supports power dissipation up to 62 W and withstands operating temperatures ranging from -55 °C to 175 °C, making it suitable for thermally challenging environments.

Qualified to the AEC-Q101 automotive standard, BUK9M3580E is well suited for demanding applications such as motor control, lamp and solenoid management, transmission control, and other automotive systems operating at 12 V, 24 V, and 48 V. It is repetitive avalanche rated and provides reliable performance under continuous and transient load conditions.

The compact LFPAK package dimensions (3.4 mm length, 2.6 mm width, 0.9 mm height) allow for efficient PCB layout and space-saving designs. The device’s typical gate charge of 13.5 nC and maximum gate-source voltage of 15 V reflect true logic-level gate drive capability, ensuring compatibility with low voltage logic signals.

This MOSFET offers a low on-resistance of 88 mΩ, enhancing efficiency in power switching. Designed for automotive applications, it aligns with the AEC-Q101 quality standards. Supports repetitive avalanche conditions, increasing ruggedness and reliability.

Operates efficiently across a wide temperature range from -55 °C to 175 °C. The LFPAK surface mount package supports compact, high-density PCB designs.

It finds broad applications in industrial, automotive, and power management systems where efficient, reliable switching is critical. For additional component sourcing or detailed technical information, EnvMart provides extensive listings of semiconductor devices including MOSFETs from trusted manufacturers like Nexperia.