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Infineon IAUT300N08S5N014ATMA1 N-Channel MOSFET, 120A, 40V, Enhancement Mode, 8-Pin TO-263
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUT300N08S5N014ATMA1 |
| Mount Type | Surface |
| Series | IAUT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- N-channel enhancement MOSFET with high current capability.
- Maximum continuous drain current of 120A.
- Maximum drain-source voltage of 40V for reliable performance.
- Low Rds(on) of 1.4mΩ ensures energy-efficient operation.
- Automotive AEC-Q101 qualified for demanding environments.
- Wide operating temperature range from -55°C to 175°C.
- Surface mount TO-263 package with 8 pins.
- RoHS compliant for environmental responsibility.
Product Description
Infineon IAUT300N08S5N014ATMA1 is a high-efficiency N-channel enhancement mode MOSFET, engineered for rigorous automotive and power electronics applications. The MOSFET leverages Infineon's advanced planar HEXFET® technology to deliver low on-resistance per silicon area, ensuring reliable switching performance, minimal heat dissipation, and improved system efficiency.
N-channel enhancement MOSFET with high current capability. Maximum continuous drain current of 120A. Maximum drain-source voltage of 40V for reliable performance. Low Rds(on) of 1.4mΩ ensures energy-efficient operation. Automotive AEC-Q101 qualified for demanding environments.
Wide operating temperature range from -55°C to 175°C. Surface mount TO-263 package with 8 pins. RoHS compliant for environmental responsibility.
With a wide maximum gate-source voltage of 20V, the IAUT300N08S5N014ATMA1 supports robust control in demanding circuits. Maximum power dissipation of 81W enables high load handling, ideal for motor drivers, power supply units, and electronic switching interfaces. The package supports automated manufacturing with reel-ready surface mount configuration.
This MOSFET offers exceptional reliability due to automotive AEC-Q101 qualification and superior thermal performance with a maximum junction temperature of 175°C. RoHS compliance further ensures environmentally safe operation.
The IAUT300N08S5N014ATMA1 is widely used in automotive, industrial, consumer electronics, and power management sectors. Its robust electrical ratings, wide thermal operating range, and compact TO-263 form factor make it suitable for use in systems requiring high-current, low-voltage switching, including battery management, DC motor control, and power conversion modules.
For more advanced MOSFET solutions and to browse Infineon's automotive and industrial semiconductor portfolio, explore the full MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the IAUT300N08S5N014ATMA1 is 120A.
This MOSFET has a maximum drain-source voltage of 40V.
The Rds(on) value for this model is 1.4mΩ, which ensures energy-efficient operation.
The operating temperature range for the IAUT300N08S5N014ATMA1 is from -55°C to 175°C.
It is packaged in a surface mount TO-263 package with 8 pins.
This model is automotive AEC-Q101 qualified, making it suitable for demanding environments.
The IAUT300N08S5N014ATMA1 has a maximum power dissipation of 81W.
The typical gate charge (Qg) at Vgs is 80nC.
The maximum gate-source voltage (Vgs) for this MOSFET is 20V.
Yes, the IAUT300N08S5N014ATMA1 is RoHS compliant, ensuring environmentally responsible operation.
This model is widely used in automotive, industrial, consumer electronics, and power management sectors, particularly in systems requiring high-current, low-voltage switching.
The IAUT300N08S5N014ATMA1 is an N-channel enhancement mode MOSFET.
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