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Infineon N-Channel Power MOSFET 381A, 40V, SuperSO8 8-Pin, Surface Mount BSC0501NSIATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC0501NSIATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Rated for a maximum continuous drain current of 381A.
- Operates at a maximum drain-source voltage of 40V.
- SuperSO8 5 x 6 package with 8 pins for surface mount.
- Low on-state resistance of 0.7mΩ enhances efficiency.
- Wide operating temperature range from -55°C to 175°C.
- Optimized for high performance buck converters and desktop/server applications.
- Monolithic integrated Schottky-like diode for advanced performance.
- RoHS compliant and halogen-free according to IEC61249-2-21.
Product Description
Infineon BSC0501NSIATMA1 is a high-performance N-Channel power MOSFET engineered for demanding industrial, server, and voltage regulator solutions. The device features a robust surface-mount SuperSO8 5 x 6 package with 8 pins, delivering a maximum continuous drain current of 381A and a maximum drain-source voltage of 40V. Low on-state resistance of 0.7mΩ ensures efficient power conversion with minimal losses, making it an ideal choice for high-density voltage regulation and energy-sensitive systems.
Designed for applications such as desktop and server power supplies, high power density voltage regulators, and industrial power management, the BSC0501NSIATMA1 delivers benchmark power density and energy efficiency both in standby and full operation modes. Its wide operating temperature range, from -55°C to 175°C, provides reliability in harsh environments. Qualified according to JEDEC standards, this MOSFET meets stringent industry requirements for quality and performance.
Maximum continuous drain current of 381A supports high current operations. Maximum drain-source voltage of 40V allows for versatile circuit integration. SuperSO8 package design enables compact, surface mount installations.
Low RDS(on) of 0.7mΩ reduces power dissipation. Integrated Schottky-like diode and 100% avalanche tested for ruggedness. RoHS compliant and halogen-free guarantees environmental compatibility. Typical gate charge of 80nC and maximum power dissipation of 81W.
Automotive standard: No, primarily suited for industrial/commercial uses.
This Infineon OptiMOS™ 5 Power MOSFET is widely used in industrial, laboratory, power supply, and high-power conversion applications. It is particularly suitable for design engineers seeking reliable solutions for voltage regulators, DC/DC converters, and energy-efficient power electronics. The device's specifications and certifications ensure compatibility with global standards.
Explore more in the MOSFET category at EnvMart or browse Infineon’s offerings for advanced semiconductor solutions for power and energy management.
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Frequently Asked Questions
The maximum continuous drain current of this model is 381A.
It operates at a maximum drain-source voltage of 40V.
The on-state resistance (RDS(on)) is 0.7mΩ, which enhances efficiency.
It has a wide operating temperature range from -55°C to 175°C.
The typical gate charge is 80nC at Vgs.
The maximum power dissipation is rated at 81W.
Yes, it is RoHS compliant and halogen-free according to IEC61249-2-21.
The forward voltage of the integrated Schottky-like diode is 1V.
The maximum gate-source voltage (Vgs) is 20V.
The country of origin for this model is India.
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