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Infineon OptiMOS 5 N-Channel Power MOSFET , 381A, 40V, 81W, SuperSO8 5x6, 8-Pin BSC0
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC0 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 381A enables robust power handling.
- Drain-source voltage rated at 40V for versatile switching operations.
- Ultra-low on-state resistance of 2.9mΩ reduces power losses.
- SuperSO8 5x6 surface-mount package with 8 pins for compact PCB design.
- Supports typical gate charge of 80nC for efficient drive.
- Maximum power dissipation of 81W ensures reliable thermal management.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- RoHS compliant and halogen-free according to IEC61249-2-21.
Product Description
Infineon BSC018NE2LSIATMA1 N-Channel Power MOSFET is engineered for high-efficiency DC-DC conversion and voltage regulation in servers, datacom, and telecom equipment. Featuring a powerful 381 ampere continuous drain capability and up to 40 volt drain-source voltage, this OptiMOS™ 5 device meets the stringent demands of modern power applications.
With its ultra-low on-state resistance of 2.9 milliohms, this MOSFET minimizes conduction losses, allowing for improved energy efficiency and reduced heating. Its compact SuperSO8 5x6 surface-mount package simplifies integration into space-constrained designs while maintaining high performance.
Typical gate charge is only 80nC, enabling rapid switching and low drive energy consumption. The device supports a maximum power dissipation of 81 watts, ensuring stable operation under high load conditions. Designed to withstand harsh environments, it offers a wide operating temperature range from -55°C to 175°C.
Compliance with RoHS standards and halogen-free materials makes it suitable for environmentally conscious manufacturing requirements. Qualified according to JEDEC standards and 100% avalanche tested, it delivers reliability for industrial, commercial, and automotive systems (not automotive-grade by standard).
Maximum continuous drain current: 381A. Drain-source voltage: 40V. On-state resistance: 2.9mΩ. Power dissipation: 81W. Surface-mount SuperSO8 5x6 package, 8 pins. Gate-source voltage max: 20V. Operating temperature: -55°C to 175°C.
RoHS compliant and halogen-free.
Ideal for multiphase converter designs, buck converters, and demanding voltage regulation applications across industrial, laboratory, and commercial electronics. This device saves system cost by reducing power phases, improves efficiency under all load conditions, and supports advanced PCB layouts.
For more MOSFETs and advanced semiconductor solutions, explore the Electronics & Electricals and Semiconductor categories on EnvMart, or discover Infineon's full OptiMOS device range.
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Frequently Asked Questions
The maximum continuous drain current of this model is 381A.
This MOSFET has a drain-source voltage rating of 40V.
It features an ultra-low on-state resistance of 2.9mΩ.
The maximum power dissipation is 81W, ensuring reliable thermal management.
The typical gate charge is 80nC, allowing for efficient drive.
It operates within a wide temperature range from -55°C to 175°C.
This MOSFET is RoHS compliant and halogen-free according to IEC61249-2-21.
It features an N-channel type configuration.
The maximum gate-source voltage for this device is 20V.
The forward voltage is rated at 1V.
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