Infineon BSC018NE2LSIATMA1 N-Channel Power MOSFET is engineered for high-efficiency DC-DC conversion and voltage regulation in servers, datacom, and telecom equipment. Featuring a powerful 381 ampere continuous drain capability and up to 40 volt drain-source voltage, this OptiMOS™ 5 device meets the stringent demands of modern power applications.
With its ultra-low on-state resistance of 2.9 milliohms, this MOSFET minimizes conduction losses, allowing for improved energy efficiency and reduced heating. Its compact SuperSO8 5x6 surface-mount package simplifies integration into space-constrained designs while maintaining high performance.
Typical gate charge is only 80nC, enabling rapid switching and low drive energy consumption. The device supports a maximum power dissipation of 81 watts, ensuring stable operation under high load conditions. Designed to withstand harsh environments, it offers a wide operating temperature range from -55°C to 175°C.
Compliance with RoHS standards and halogen-free materials makes it suitable for environmentally conscious manufacturing requirements. Qualified according to JEDEC standards and 100% avalanche tested, it delivers reliability for industrial, commercial, and automotive systems (not automotive-grade by standard).
Maximum continuous drain current: 381A. Drain-source voltage: 40V. On-state resistance: 2.9mΩ. Power dissipation: 81W. Surface-mount SuperSO8 5x6 package, 8 pins. Gate-source voltage max: 20V. Operating temperature: -55°C to 175°C.
RoHS compliant and halogen-free.
Ideal for multiphase converter designs, buck converters, and demanding voltage regulation applications across industrial, laboratory, and commercial electronics. This device saves system cost by reducing power phases, improves efficiency under all load conditions, and supports advanced PCB layouts.
For more MOSFETs and advanced semiconductor solutions, explore the Electronics & Electricals and Semiconductor categories on EnvMart, or discover Infineon's full OptiMOS device range.
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