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Infineon N-Channel MOSFET 381A 30V, SuperSO8 5x6, 8-Pin, Surface Mount BSC220N20NSFDATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC220N20NSFDATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Offers a maximum continuous drain current of 381A and drain source voltage of 30V.
- Features very low drain-source resistance of 0.7mΩ.
- Comes in a compact SuperSO8 5 x 6 surface-mount package with 8 pins.
- Operates reliably across -55°C to 175°C.
- Pb-free, RoHS compliant and halogen-free for environmentally-conscious designs.
- Suitable for high-frequency switching and synchronous rectification applications.
- Incorporates an N-channel, normal level design for enhanced efficiency.
Product Description
Infineon BSC220N20NSFDATMA1 is a high-performance N-channel MOSFET designed for demanding industrial, automotive, and power management applications. With a maximum continuous drain current of 381A and a drain source voltage of 30V, this MOSFET excels in circuits requiring high-current handling and low on-resistance. Encapsulated in a SuperSO8 5 x 6 package and featuring 8 pins, the device is optimized for efficient surface mounting, making it highly suitable for modern PCB designs.
The BSC220N20NSFDATMA1 delivers superior power dissipation of up to 81W and an impressively low drain-source resistance of just 0.7mΩ, ensuring minimal heat generation during operation. Its normal-level N-channel architecture, typical gate charge of 80nC, and forward voltage of 1V support rapid switching and efficient energy transfer, essential in high-frequency power conversion and synchronous rectification circuits.
Maximum drain current: 381A for robust current handling in power circuits. Drain source voltage up to 30V, allowing flexibility across various systems. Ultra-low on-resistance (0.7mΩ) for reduced conduction losses. Supports a wide temperature range from -55°C to 175°C for reliability in demanding environments.
Presents 8 leaded, SuperSO8 surface mount form factor for space-saving PCB layouts. Fully RoHS compliant and halogen-free for lead-free initiatives and eco-conscious manufacturing. Typical gate charge is 80nC at operating voltages for efficient switching.
This OptiMOS power MOSFET is ideal for high-frequency switching, synchronous rectification, DC/DC converters, and efficient power management in server, telecom, and automotive electronic control units. It is equally well suited for high-efficiency industrial power supplies where reliability, compactness, and high current capability are essential.
The Infineon BSC220N20NSFDATMA1 ensures adherence to global environmental requirements, supporting RoHS and halogen-free standards. Its Pb-free lead plating further underscores its fit for green manufacturing processes.
Typical industrial use cases include high-efficiency power stage designs, battery management, synchronous rectification in power supplies, and robust, high-current switching applications in automotive ECUs.
Browse more MOSFET transistors and Infineon components in EnvMart's Electronics & Electricals → Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for the BSC220N20NSFDATMA1 is 381A, making it suitable for high-current handling applications.
This MOSFET has a maximum drain-source voltage rating of 30V, providing flexibility for various circuit designs.
The on-resistance of this model is 0.7mΩ, which helps to minimize conduction losses during operation.
It operates reliably across a temperature range of -55°C to 175°C, suitable for demanding environments.
The BSC220N20NSFDATMA1 comes in a SuperSO8 5 x 6 surface-mount package with 8 pins, optimized for efficient PCB designs.
The typical gate charge at operating voltages for this MOSFET is 80nC, supporting efficient switching.
This model can handle a maximum power dissipation of up to 81W, ensuring effective thermal management in circuits.
The BSC220N20NSFDATMA1 is RoHS compliant, Pb-free, and halogen-free, aligning with environmental standards.
It is ideal for high-frequency switching, synchronous rectification, and power management in automotive and industrial applications.
The forward voltage for the BSC220N20NSFDATMA1 is 1V, which is typical for this type of MOSFET.
This model features an N-channel design, which is standard for enhancing efficiency in power applications.
The maximum gate-source voltage rating for this MOSFET is 20V, allowing for compatibility with various gate drive circuits.
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