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Infineon IAUC100N10S5L040ATMA1 N-Channel MOSFET 120A 40V, Enhancement Type, 8-Pin SuperSO8 5 x 6
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC100N10S5L040ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- High-performance N-channel MOSFET for demanding power applications.
- Maximum drain current of 120A suitable for high-load circuits.
- 40V maximum drain-source voltage offers robust handling of DC power.
- Low drain-source resistance of 1.4mΩ for efficient power transmission.
- 8-pin SuperSO8 package with 5 x 6 mm footprint ensures compact integration.
- Surface mount design simplifies PCB installation for automated assembly.
- Operates reliably from -55°C to 175°C for industrial and automotive environments.
- AEC-Q101 and RoHS compliance for safety and environmental standards.
Product Description
Infineon IAUC100N10S5L040ATMA1 N-Channel MOSFET is a high-power semiconductor designed for efficient switching and amplification in demanding electronic circuits. The enhancement mode device provides a maximum continuous drain current of 120A and a drain-source voltage of 40V, enabling it to support substantial loads in power management and motor control applications.
This MOSFET features a SuperSO8 package with 8-pin configuration, facilitating compact and reliable surface mount integration. With a low drain-source resistance of 1.4mΩ, it delivers high efficiency and minimizes heat generation in switching circuits. The typical gate charge at Vgs is 80nC, supporting rapid switching speeds for industrial and automotive use.
Operating within a broad temperature range (-55°C to 175°C), the IAUC100N10S5L040ATMA1 is suitable for environments with stringent thermal demands. Its compliance with AEC-Q101 and RoHS standards ensures reliability, safety, and environmental friendliness, making it ideal for use in automotive electronic systems, motor drivers, power converters, and renewable energy hardware.
Key specifications include an enhancement channel mode, surface mount capability, maximum power dissipation of 81W, and a forward voltage of 1.1V. The MOSFET is engineered for robust performance in automatic optical inspection (AOI)-compatible designs and is 100% avalanche tested for quality assurance.
High-performance N-channel MOSFET for demanding power applications. Maximum drain current of 120A suitable for high-load circuits. 40V maximum drain-source voltage offers robust handling of DC power. Low drain-source resistance of 1.4mΩ for efficient power transmission.
8-pin SuperSO8 package with 5 x 6 mm footprint ensures compact integration. Surface mount design simplifies PCB installation for automated assembly. Operates reliably from -55°C to 175°C for industrial and automotive environments.
AEC-Q101 and RoHS compliance for safety and environmental standards.
Typical applications include industrial power supplies, inverters, DC-DC converters, automotive control units, and manufacturing equipment where high reliability and performance are essential. For more advanced semiconductor solutions, browse other Infineon MOSFET models and discover a comprehensive range of discrete power devices on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the IAUC100N10S5L040ATMA1 is 120A, making it suitable for high-load circuits.
This MOSFET has a maximum drain-source voltage of 40V, allowing it to handle robust DC power applications.
The drain-source resistance for this model is 1.4mΩ, which contributes to efficient power transmission.
The typical gate charge at Vgs for the IAUC100N10S5L040ATMA1 is 80nC, supporting rapid switching speeds.
It operates reliably within a temperature range of -55°C to 175°C, suitable for industrial and automotive environments.
The IAUC100N10S5L040ATMA1 uses an 8-pin SuperSO8 package with a footprint of 5 x 6 mm, facilitating compact integration.
Yes, it is compliant with AEC-Q101 and RoHS standards, ensuring safety and environmental friendliness.
The maximum power dissipation for the IAUC100N10S5L040ATMA1 is 81W, which is important for managing heat in high-load applications.
The forward voltage for this model is 1.1V, which is relevant for its performance in various applications.
This MOSFET is suitable for applications such as industrial power supplies, inverters, DC-DC converters, and automotive control units.
The IAUC100N10S5L040ATMA1 features an enhancement type N-channel, designed for efficient switching and amplification.
This MOSFET is designed for surface mount installation, simplifying PCB assembly processes.
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