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Nexperia N-Channel MOSFET 60V 300mA Enhancement SOT-23 3-Pin 2N7002,215

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1mm
Length 3mm
Model 2N7002,215
Width 1.4mm
Mount Type Surface
Series 2N7002
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 300mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 830mW
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.2V

Key Features

  • Supports a maximum drain source voltage of 60V with up to 300mA continuous drain current.
  • Compact SOT-23 3-pin surface mount package for efficient board space utilization.
  • Enhancement mode MOSFET with low on-resistance for efficient switching.
  • Operates reliably over a wide temperature range from -65°C to 150°C.
  • Suitable for industrial, consumer, and communication electronic applications.
  • Maximum gate source voltage of 30V and power dissipation up to 830mW.
  • Complies with RoHS standards and ensures long device lifecycle.

Product Description

The Nexperia 2N7002,215 is an advanced N-Channel MOSFET designed for general-purpose electronic switching and amplification applications. Rated for a maximum drain source voltage (Vds) of 60V and a continuous drain current (Id) of 300mA, this device is ideally suited for industrial, consumer, telecommunications, and automation equipment requiring reliable low-power switching functionality.

This MOSFET is constructed in a compact SOT-23, 3-pin surface-mount package, which allows for efficient utilization of PCB space in dense circuit layouts. With enhancement mode operation, the device features a low maximum drain-source resistance (Rds) of 5Ω, ensuring minimal conduction losses during switching operations.

Supports a maximum drain source voltage of 60V with up to 300mA continuous drain current. Compact SOT-23 3-pin surface mount package for efficient board space utilization. Enhancement mode MOSFET with low on-resistance for efficient switching.

Operates reliably over a wide temperature range from -65°C to 150°C. Suitable for industrial, consumer, and communication electronic applications. Maximum gate source voltage of 30V and power dissipation up to 830mW. Complies with RoHS standards and ensures long device lifecycle.

The 2N7002,215 MOSFET can be employed in a variety of scenarios including driver circuits, analog/digital switches, and level shifters. Its robust construction and operating temperature range of -65°C to +150°C ensure high durability and long-term performance in even challenging environments.

The SOT-23 package makes it an excellent choice for miniaturized and automated electronic manufacturing. Industrial design engineers value this device for its dependable surface-mount compatibility and optimal balance of switching speed and power efficiency.

Typical applications encompass industrial automation controllers, instrumentation panels, portable and hand-held electronics, communication modules, and consumer electronic devices. The Nexperia 2N7002,215 provides best-in-class efficiency for switching logic signals and power management tasks in both professional and commercial circuit designs.

Choose EnvMart for a reliable selection of semiconductor components like the Nexperia 2N7002,215. Browse more MOSFETs and electronics by Nexperia and other leading brands in our Electronics & Electrical supplies category.

Nexperia N-Channel MOSFET 60V 300mA Enhancement SOT-23 3-Pin 2N7002,215
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Frequently Asked Questions

The maximum drain source voltage (Vds) for this MOSFET is 60V.

This model supports a continuous drain current (Id) of up to 300mA.

It is packaged in a compact SOT-23, 3-pin surface mount configuration.

The maximum power dissipation (Pd) for this model is 830mW.

This MOSFET operates reliably over a wide temperature range from -65°C to 150°C.

The maximum gate source voltage (Vgs) is 30V.

The maximum drain-source resistance (Rds) is 5Ω.

The dimensions are 3mm in length, 1.4mm in width, and 1mm in height.

It is suitable for applications in industrial automation, consumer electronics, and telecommunications.

This model features an N-channel type.

This MOSFET has a pin count of 3.

Yes, it complies with RoHS standards, ensuring a long device lifecycle.

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