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Infineon OptiMOS 3 N-Channel MOSFET 3.2A 60V SOT-89 Enhancement Surface Mount 4-Pin BSS606NH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Dimensions | 4.5 x 2.5 x 1.5 mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Model | BSS606NH6327XTSA1 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 3.2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 3.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Delivers a maximum continuous drain current of 3.2A for moderate load switching.
- 60V drain-source voltage rating provides safe medium-voltage switching in compact designs.
- Low RDS(on) at 90mΩ ensures reduced conduction losses in PCB-mounted power stages.
- Enhancement mode N-channel operation supports efficient low-side switching applications.
- Surface mount SOT-89 package with compact 4.5 x 2.5 x 1.5mm enables use in tight PCB layouts.
- Rated for wide temperature range from -55°C to +150°C, suitable for harsh environments.
- Typical gate charge of 3.7nC allows fast switching performance and flexible gate drive.
- Complies with automotive AEC-Q101 standards, ideal for auxiliary and embedded systems.
Product Description
The Infineon BSS606NH6327XTSA1 is a high-performance OptiMOS 3 N-channel MOSFET designed for reliable DC power switching in compact electronic systems. Featuring a robust maximum continuous drain current of 3.2A and a drain-source voltage rating of 60V, this enhancement-mode surface mount device offers optimal efficiency for medium-voltage switching duties on PCBs.
Its compact SOT-89 package (4.5 x 2.5 x 1.5mm) saves space in densely populated layouts while providing surface mount convenience for automated assembly. The low RDS(on) (90mΩ) minimizes power loss during conduction, supporting energy-saving designs in DC/DC converters, motor-control interfaces, telematics modules, and embedded auxiliary power circuits.
Operating over a wide temperature range (-55°C to 150°C), the BSS606NH6327XTSA1 maintains stable performance in both high-temperature and cold-climate conditions, making it suitable for automotive and industrial applications. The typical gate charge of 3.7nC enables responsive switching and flexible gate-drive voltages up to 20V, catering to advanced power stage requirements.
Pin configuration features four terminals for precise surface-mount installation, with the enhancement mode channel requiring a positive gate-drive for low-side switching logic. Applications cover automotive auxiliary circuits, DC/DC converter stages, motor-control gate drivers, and load switching in telematics and embedded systems, where reliability and compactness are critical.
As an automotive-grade device compliant with AEC-Q101 standards, this MOSFET offers trusted performance in both rugged industrial and demanding laboratory environments. Its key benefits - medium-voltage capability, efficient current handling, low on-resistance, and versatile operating range - give engineers a proven solution for power distribution and switching tasks.
Maximum 3.2A continuous drain current for moderate load operations. 60V maximum drain-source voltage offers medium-voltage coverage. Low 90mΩ RDS(on) for enhanced conduction efficiency. 4-pin SOT-89 surface-mount package saves PCB space.
Enhancement-mode N-channel configuration assures reliable low-side switching. Operates from -55°C to +150°C for high thermal resilience. Compliant with automotive AEC-Q101 for critical power circuit applications. Explore more MOSFETs and industrial switching devices from Infineon in the EnvMart electronics category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.2A, suitable for moderate load switching applications.
This MOSFET has a maximum drain-source voltage rating of 60V, allowing for safe medium-voltage switching.
The RDS(on) value is 90mΩ, which helps in reducing conduction losses during operation.
The dimensions of the SOT-89 package are 4.5mm in length, 2.5mm in width, and 1.5mm in height.
The typical gate charge is 3.7nC, which allows for fast switching performance and flexible gate drive.
It operates over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.
This model complies with automotive AEC-Q101 standards, ensuring reliability for automotive applications.
The SOT-89 package features four pins, allowing for precise surface-mount installation.
It uses an enhancement mode N-channel configuration, which is suitable for low-side switching applications.
The maximum gate-source voltage for this MOSFET is 20V, which supports various gate drive requirements.
The forward voltage is 1.1V, which is relevant for its performance in power distribution applications.
It is suitable for applications such as DC/DC converters, motor-control gate drivers, and automotive auxiliary circuits.
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