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DiodesZetex PNP Bipolar Transistor SOT-223, -3A, -40V, High Gain, Surface Mount FZT1151ATA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.7mm
Length 6.7mm
Model FZT1151ATA
Width 7.3mm
Mount Type Surface
Series FZT1151A
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 45V
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100
Maximum Power Dissipation Pd 2.5W
Maximum DC Collector Current Idc -3A
Transistor Configuration Single
Maximum Transition Frequency ft 145MHz

Key Features

  • Maximum collector current of -3A enables use in high current circuits.
  • Collector-emitter voltage rated to -40V for enhanced device protection.
  • Compact SOT-223 surface-mount package saves PCB space.
  • High minimum DC current gain (hFE) of 100 for signal amplification.
  • Operates reliably from -55°C to 150°C for industrial use.
  • Fast switching with 145MHz transition frequency benefits high-speed designs.
  • Automotive standard compliance (AEC-Q200, AEC-Q101, AEC-Q100) supports vehicle electronics.
  • Single transistor configuration with 4 pins offers design flexibility.

Product Description

The DiodesZetex FZT1151ATA is a high-reliability PNP bipolar junction transistor (BJT) engineered for use in medium-to-high current switching and amplification applications within both industrial and automotive electronics. With its ability to handle a maximum collector current of -3A and withstand collector-emitter voltages up to -40V, this transistor is well-suited for circuits where robust performance is necessary, such as power management, relay drivers, DC-DC converters, and protection circuitry.

Featuring a compact SOT-223 surface-mount package, the FZT1151ATA facilitates efficient PCB layout and automated assembly, making it ideal for high-density and space-constrained applications. The surface-mountability is complemented by a single transistor configuration, which offers design simplicity and flexibility in various electronic systems.

The minimum DC current gain (hFE) of 100 delivers strong amplification with lower input drive requirements, supporting efficient operation in both analog and digital circuits. The device's maximum power dissipation of 2.5W enables its use in moderately power-demanding environments while maintaining device integrity.

This PNP transistor operates reliably over a broad temperature range, from -55°C to 150°C, supporting wide-ranging environmental conditions typical of automotive and industrial installations. Compliance with key automotive standards, including AEC-Q100, AEC-Q101, and AEC-Q200, affirms the transistor’s suitability for critical and regulated vehicular applications.

Additional technical capabilities include a maximum collector-base voltage (VCBO) of 45V, maximum emitter-base voltage (VEBO) of 5V, maximum transition frequency (ft) of 145MHz, and a 4-pin count to enable straightforward integration. The package measures 6.7mm in length, 7.3mm in width, and 1.7mm in height, further promoting PCB space savings and system miniaturization.

Given its robust electrical ratings, automotive compatibility, and compact footprint, the DiodesZetex FZT1151ATA is a dependable choice for manufacturers developing modern electronics in industrial automation, smart vehicles, consumer products, and power regulation equipment.

For more products and innovations in the field of semiconductors and discrete transistors, explore EnvMart's wide range of components and solutions tailored for engineers and manufacturers.

Explore more products in our Bipolar Transistors category.

DiodesZetex PNP Bipolar Transistor SOT-223, -3A, -40V, High Gain, Surface Mount FZT1151ATA
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Frequently Asked Questions

The maximum collector current for the FZT1151ATA is -3A, making it suitable for high current applications.

This model has a collector-emitter voltage rating of -40V, which enhances device protection in various applications.

The minimum DC current gain (hFE) for the FZT1151ATA is 100, providing strong amplification capabilities.

It operates reliably over a temperature range from -55°C to 150°C, suitable for both industrial and automotive environments.

The FZT1151ATA comes in a compact SOT-223 surface-mount package, which is designed for efficient PCB layout.

This model measures 6.7mm in length, 7.3mm in width, and 1.7mm in height, optimizing PCB space.

The FZT1151ATA complies with automotive standards AEC-Q200, AEC-Q101, and AEC-Q100, ensuring its suitability for vehicle electronics.

The maximum power dissipation for the FZT1151ATA is 2.5W, allowing it to function in moderately power-demanding environments.

The maximum transition frequency (ft) of the FZT1151ATA is 145MHz, which benefits high-speed designs.

This transistor features a single configuration with 4 pins, facilitating straightforward integration into electronic systems.

The maximum emitter-base voltage (VEBO) for the FZT1151ATA is 5V, which is critical for its operational limits.

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