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onsemi NPN Darlington Transistor, 4 A, 100 V, HFE 750, 3-Pin TO-225 BD681G

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onsemi NPN Darlington Transistor, 4 A, 100 V, HFE 750, 3-Pin TO-225 BD681G

Name: onsemi NPN Darlington Transistor, 4 A, 100 V, HFE 750, 3-Pin TO-225 BD681G
Brand: onsemi
SKU: 119346

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Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	11.04mm
Length	7.74mm
Model	BD681G
Mount Type	Through Hole
Series	BD675
Maximum Operating Temperature	150°C
Package Type	TO-225
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Continuous Collector Current Ic	4A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	750
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2.5V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	0.2mA
onsemi 1 Darlington Transistor NPN, 4 A 100 V HFE	750, 3-Pin TO-225

Key Features

This transistor features a high DC current gain of 750 for efficient switching.
Comes in a 3-pin TO-225 package suitable for through-hole mounting.
Maximum emitter base voltage is rated at 5 V for reliable operation.
Operates within an extended temperature range from -55°C to 150°C.
Low collector emitter saturation voltage of 2.5 V minimizes power loss.
Designed as a single element per chip with robust electrical characteristics.
Maximum collector cutoff current is only 0.2 mA ensuring low leakage.
Not automotive AEC-Q101 qualified but suitable for general semiconductor applications.

Product Description

onsemi BD681G is a high-performance NPN Darlington Transistor designed for power amplification and switching applications. It handles a maximum continuous collector current of 4 A and a collector emitter voltage of 100 V, making it suitable for medium power electronic circuits.

The device features a high DC current gain (hFE) of 750, ensuring efficient transistor operation with minimal base current. It is housed in a TO-225 package with 3 pins suitable for through-hole mounting, providing mechanical stability and ease of integration on printed circuit boards.

This transistor supports a maximum emitter base voltage (VEBO) of 5 V and a maximum collector base voltage (VCBO) of 100 V, qualifying it for robust switching tasks. It maintains operation in a wide temperature range from -55°C to a maximum of 150°C, suitable for industrial and commercial electronics.

The saturation voltage between collector and emitter (VceSAT) is low at 2.5 V, reducing conduction losses and improving efficiency. Maximum collector cutoff current is limited to 0.2 mA, ensuring minimal leakage current during off states.

Though not certified with automotive standards (AEC-Q101), this transistor is ideal for a variety of industrial, laboratory, and consumer electronics uses where high gain and robustness are required.

High continuous collector current rating of 4 A. Maximum collector emitter voltage of 100 V for medium power tasks. High DC current gain (hFE) of 750 for efficient switching. 3-pin TO-225 package designed for through-hole mounting.

Wide operating temperature range from -55°C to 150°C. Low collector emitter saturation voltage at 2.5 V for low power dissipation. Single element configuration for precise electrical performance. Maximum collector cutoff current of 0.2 mA for low leakage.

Suitable for use in amplifiers, power switching devices, consumer electronics, and general purpose industrial circuits. onsemi BD681G transistors are trusted for their reliable performance in demanding environments.

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