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onsemi N-Channel MOSFET, 222 A Continuous Drain Current, 100 V Drain-Source Voltage, TO-220 Package FDP2D3N10C
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.21mm |
| Length | 10.36mm |
| Model | FDP2D3N10C |
| Width | 4.67mm |
| Mount Type | Through Hole |
| Series | FDP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 222A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 214W |
| Typical Gate Charge Qg @ Vgs | 108nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features a maximum continuous drain current of 222 A.
- Supports a maximum drain-source voltage of 100 V.
- Utilizes advanced PowerTrench® technology with shielded gate for low resistance and high performance.
- Maximum power dissipation of 214 W ensures robust operation.
- Typical gate charge is 108 nC at Vgs, enabling efficient switching.
- Operating temperature range from -55°C to 175°C for reliability in harsh environments.
- Low RDS(on) of 2.3 mΩ at VGS = 10 V for reduced conduction losses.
- Widely used in power supplies, motor drives, telecom, and computing applications.
Product Description
onsemi FDP2D3N10C is a high-performance N-Channel MOSFET designed for demanding power applications. Manufactured using ON Semiconductor's advanced PowerTrench® process, it incorporates shielded gate technology to achieve an extremely low RDS(on) of 2.3 mΩ at VGS = 10 V and ID = 222 A, optimizing conduction efficiency and switching performance.
The MOSFET is housed in a standard 3-pin TO-220 package suitable for through-hole mounting, supporting a maximum continuous drain current of 222 A and a maximum drain-source voltage of 100 V. It delivers a maximum power dissipation rating of 214 W, enabling dependable handling of high power loads.
Designed for a wide temperature range from -55°C to 175°C, this device provides strong reliability in industrial, computing, and telecom power supply environments. The typical gate charge of 108 nC ensures low switching losses, improving overall system efficiency.
Key features include a soft body diode with low reverse recovery charge, internal snubber function to suppress voltage spikes, and robust EMI performance. Typical applications encompass synchronous rectification for ATX, server, workstation, and industrial power supplies; motor drives; micro solar inverters; and uninterruptible power supplies.
The device originates from China and conforms to industrial standards, though it does not carry explicit automotive certification. Features a maximum continuous drain current of 222 A. Supports a maximum drain-source voltage of 100 V.
Low RDS(on) resistance of 2.3 mΩ for enhanced efficiency. Maximum power dissipation of 214 W for high load handling. Wide operating temperature range from -55°C to 175°C. Advanced shielded gate technology with PowerTrench® process.
Typical gate charge of 108 nC to minimize switching losses. Suitable for use in power supplies, motor drives, telecom, and computing sectors. 3-pin TO-220 through-hole package for convenient assembly. Explore more onsemi MOSFET products in the Electronics & Electricals section for diverse industrial and commercial uses.
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Frequently Asked Questions
The maximum continuous drain current of this model is 222 A.
It supports a maximum drain-source voltage of 100 V.
The RDS(on) resistance is 2.3 mΩ at VGS = 10 V.
The maximum power dissipation rating is 214 W.
The typical gate charge is 108 nC at Vgs.
It operates within a temperature range from -55°C to 175°C.
This MOSFET is housed in a TO-220 package suitable for through-hole mounting.
It has a pin count of 3.
The device originates from China.
It is widely used in power supplies, motor drives, telecom, and computing applications.
The maximum gate-source voltage is 20 V.
It utilizes advanced PowerTrench® technology with shielded gate for low resistance and high performance.
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