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onsemi P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23 Package NTR1P02T1G

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onsemi P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23 Package NTR1P02T1G

Name: onsemi P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23 Package NTR1P02T1G
Brand: onsemi
SKU: 416274
Price: 0.25 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.9mm
Model	NTR1P02T1G
Width	1.3mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	1A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	180mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	400mW
Typical Gate Charge Qg @ Vgs	2.5nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

This MOSFET has a maximum continuous drain current of 1 ampere.
It supports a maximum drain-source voltage of 20 volts.
The device features a low maximum drain-source resistance of 180 milliohms.
It has an enhancement channel mode suitable for power control applications.
The MOSFET operates safely in temperatures ranging from -55°C to 150°C.
The maximum power dissipation is 400 milliwatts, ensuring efficient heat handling.
Mount type is surface mount, compatible with automated PCB assembly.
The compact SOT-23 package measures 2.9 mm length, 1.3 mm width, and 940 micrometers height.

Product Description

onsemi NTR1P02T1G is a P-Channel MOSFET transistor optimized for power switching and control in electronic circuits. Rated for a maximum continuous drain current of 1 amp and a maximum drain-source voltage of 20 volts, this enhancement mode MOSFET is designed for efficient, reliable switching performance.

The device comes in a compact 3-pin SOT-23 surface-mount package, with precise dimensions of 2.9 mm length, 1.3 mm width, and a height of 940 micrometers. It supports robust operation in harsh environments with a temperature range from -55°C to 150°C, suitable for industrial, automotive, and consumer electronics applications.

This MOSFET features a low maximum Rds(on) of 180 milliohms, allowing for efficient current conduction with minimal power loss. The typical gate charge of 2.5 nC at Vgs and a maximum gate-source voltage of ±20 V ensures responsive switching while protecting gate oxide integrity.

With a maximum power dissipation of 400 mW, the NTR1P02T1G can handle moderate power loads safely. Its surface mount design facilitates easy integration into modern printed circuit boards (PCBs) using automated assembly lines.

onsemi devices like the NTR1P02T1G are widely used in power management, signal switching, and low voltage applications across various sectors including industrial machinery, automotive electronics, telecommunications, and consumer electronics.

This MOSFET has a maximum continuous drain current of 1 ampere. It supports a maximum drain-source voltage of 20 volts. The device features a low maximum drain-source resistance of 180 milliohms. It has an enhancement channel mode suitable for power control applications.

The MOSFET operates safely in temperatures ranging from -55°C to 150°C. The maximum power dissipation is 400 milliwatts, ensuring efficient heat handling. Mount type is surface mount, compatible with automated PCB assembly.

The compact SOT-23 package measures 2.9 mm length, 1.3 mm width, and 940 micrometers height. The device has a typical gate charge of 2.5 nanoCoulombs at Vgs. Maximum gate-source voltage rating is ±20 volts, protecting gate integrity.

Explore more onsemi MOSFETs and semiconductor components in EnvMart’s Electronics & Electricals category for advanced electronic design and manufacturing.