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Infineon N-Channel MOSFET 100 A, 80 V, Enhancement Mode, 8-Pin TDSON Surface-Mount BSC040N08NS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC040N08NS5ATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | BSC040N08NS5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 5.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 880mV |
Key Features
- Provides a maximum continuous drain current of 100 A for heavy load handling.
- Features an 80 V maximum drain-source voltage for high-voltage switching.
- Equipped with a low 5.7 mΩ drain-source resistance reducing conduction losses.
- Surface-mount TDSON package with 8 pins enables efficient PCB integration.
- Maximum power dissipation rating of 104 W supports elevated thermal loads.
- Operates in an industrial temperature range from -55°C to 150°C.
- Enhancement mode channel configuration for synchronous and low-side switching circuits.
- Typical gate charge of 43 nC ensures fast, efficient switching.
Product Description
Infineon BSC040N08NS5ATMA1 is an N-Channel MOSFET designed for high current switching applications in industrial electronic systems. It offers a continuous drain current of 100 A and an 80 V maximum drain-source voltage. Packaged in a compact 8-pin TDSON surface-mount form, it facilitates low-inductance PCB layouts and efficient heat dissipation.
This device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for demanding environments like power management systems, motor controls, and inverter modules. Its low on-resistance of 5.7 mΩ minimizes conduction losses, enhancing energy efficiency.
The enhancement-mode channel configuration supports synchronous rectification and low-side switching topologies. The MOSFET has a typical gate charge of 43 nC and a maximum gate-source voltage rating of 20 V, allowing for efficient and robust gate drive control.
Applications include DC-DC converters, industrial motor-drive stages, telecom equipment switching, and power-stage implementations in inverters. The TDSON package ensures robust PCB mounting with 8 pins providing connections for power, gate drive, and thermal management.
Provides a maximum continuous drain current of 100 A for heavy load handling. Features an 80 V maximum drain-source voltage for high-voltage switching. Equipped with a low 5.7 mΩ drain-source resistance reducing conduction losses.
Surface-mount TDSON package with 8 pins enables efficient PCB integration. Maximum power dissipation rating of 104 W supports elevated thermal loads. Operates in an industrial temperature range from -55°C to 150°C. Enhancement mode channel configuration for synchronous and low-side switching circuits.
Typical gate charge of 43 nC ensures fast, efficient switching. Maximum gate-source voltage rating of 20 V permits wide gate-drive margin. Compact dimensions (5.49 x 6.35 x 1.1 mm) facilitate dense board layouts.
This MOSFET is ideal for applications in industrial, electronic, automotive, and telecommunication power systems requiring efficient high-current switching with compact form factors.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A, suitable for heavy load handling applications.
It features a maximum drain-source voltage of 80 V, enabling high-voltage switching capabilities.
The device is equipped with a low drain-source resistance of 5.7 mΩ, which helps reduce conduction losses during operation.
The typical gate charge for this MOSFET is 43 nC, facilitating fast and efficient switching.
It operates within an industrial temperature range from -55°C to 150°C, making it suitable for demanding environments.
The maximum power dissipation rating is 104 W, which supports elevated thermal loads in various applications.
It comes in a surface-mount TDSON package with 8 pins, allowing for efficient PCB integration.
The dimensions of this model are 5.49 mm in length, 6.35 mm in width, and 1.1 mm in height.
The maximum gate-source voltage rating is 20 V, allowing for a wide gate-drive margin.
This MOSFET is suitable for applications such as DC-DC converters, industrial motor-drive stages, and power-stage implementations in inverters.
It features an enhancement mode channel configuration, which is ideal for synchronous and low-side switching circuits.
The forward voltage for this model is 880 mV, which is relevant for its performance in various applications.
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