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Infineon N-Channel MOSFET 260 A 75 V 3-Pin TO-263 Surface Mount AUIRFS3107TRL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRFS3107TRL |
| Mount Type | Surface |
| Series | AUIRFS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 260A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The MOSFET features ultra low on-resistance for efficient power handling.
- It operates reliably up to a maximum temperature of 175°C.
- Designed for surface mount application using the TO-263 package.
- Maximum gate-source voltage rating is 20 V ensuring stable switching.
- Maximum power dissipation capability is 81 W for high performance.
- Typical gate charge of 80 nC enables fast switching speeds.
- Complies with RoHS and automotive standard AEC-Q101 for quality assurance.
- Minimum operating temperature rating of -55°C supports harsh environments.
Product Description
Infineon AUIRFS3107TRL is a single N-channel HEXFET Power MOSFET designed for automotive and industrial power applications. It supports a maximum continuous drain current of 260 A and a maximum drain-source voltage of 75 V, housed in a TO-263 D2-Pak surface mount package.
The device features ultra low on-resistance, promoting high efficiency in power electronics systems. Its robust operation is ensured across a wide temperature range from -55°C to 175°C, making it suitable for demanding automotive and industrial environments.
With a maximum gate-source voltage of 20 V and typical gate charge of 80 nC, this MOSFET supports fast switching and efficient drive characteristics, ideal for power management and switching circuits.
Power dissipation rating of 81 W allows it to handle substantial loads without overheating under proper heat dissipation measures. The product complies with the RoHS directive and the automotive AEC-Q101 standard, guaranteeing environmental safety and automotive qualification.
Its 3-pin TO-263 package facilitates easy surface mounting on printed circuit boards, supporting compact and reliable assembly. The MOSFET features ultra low on-resistance for efficient power handling. It operates reliably up to a maximum temperature of 175°C.
Designed for surface mount application using the TO-263 package. Maximum gate-source voltage rating is 20 V ensuring stable switching. Maximum power dissipation capability is 81 W for high performance. Typical gate charge of 80 nC enables fast switching speeds.
Complies with RoHS and automotive standard AEC-Q101 for quality assurance. Minimum operating temperature rating of -55°C supports harsh environments.
This Infineon N-Channel MOSFET is ideal for use in automotive electronics, industrial power supplies, switching regulators, and other high current, high efficiency power management solutions. For more information, explore other discrete semiconductor options in the EnvMart electronics category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 260 A.
This MOSFET has a maximum drain-source voltage rating of 75 V.
It operates reliably within a temperature range of -55°C to 175°C.
The maximum power dissipation capability is rated at 81 W.
It is housed in a TO-263 package designed for surface mounting.
The typical gate charge is 80 nC, which enables fast switching speeds.
The maximum gate-source voltage rating is 20 V.
It complies with the automotive standard AEC-Q101.
The maximum drain-source resistance is rated at 3 mΩ, promoting high efficiency.
This model features a 3-pin configuration.
It complies with the RoHS directive for environmental safety.
The country of origin for this model is India.
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