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Infineon ISC N-Channel MOSFET 179A 100V 8-Pin TDSON Surface Mount ISC030N10NM6ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.4mm
Length 3.8mm
Model ISC030N10NM6ATMA1
Width 1.1mm
Mount Type Surface
Series ISC
Maximum Operating Temperature 175°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 179A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 2.8mΩ
Maximum Power Dissipation Pd 75W
Typical Gate Charge Qg @ Vgs 38nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Capable of handling a continuous drain current of 179A for heavy current loads.
  • Maximum drain source voltage of 100V suitable for high voltage switching tasks.
  • Low drain source resistance of 2.8mΩ minimizes conduction losses.
  • Power dissipation up to 75W allows sustained thermal handling.
  • Fast gate transition with 38nC typical gate charge at Vgs.
  • Robust gate source voltage rating of 20V enhances drive headroom.
  • Wide operating temperature range from -55°C to 175°C for tough environments.
  • Compact surface-mount TDSON package with 8 pins supports efficient board assembly.

Product Description

Infineon ISC030N10NM6ATMA1 is a rugged N-channel MOSFET semiconductor device engineered to support high-current and high-voltage power switching applications. It features a maximum continuous drain current of 179 A and a maximum drain source voltage of 100 V, making it ideal for demanding power conversion and efficient switching requirements.

This MOSFET exhibits a low maximum drain source resistance of 2.8mΩ, significantly reducing conduction losses and improving overall efficiency in electronic circuits. With a maximum power dissipation rating of 75 W, it manages thermal loads effectively, enabling long-term reliability even under heavy duty operations.

Designed with rapid gate response capabilities, the device presents a typical gate charge of 38nC at specified gate voltage ensuring fast switching speeds. Its gate source voltage tolerance of up to 20 V offers robust drive capability, enhancing the MOSFET’s suitability for various power management tasks.

Operating within a temperature range of -55°C to 175°C, this MOSFET withstands severe thermal extremes, making it appropriate for automotive applications, industrial electronics, and high-performance electronic modules. The 8-pin TDSON surface mount package facilitates easy SMD assembly on PCBs, supporting compact, high-density designs.

Common applications include high-current DC-DC converters in power supplies, motor-drive stages requiring fast switching, synchronous rectifiers for power management, automotive control electronics, and power modules in servers and telecom equipment.

Capable of handling a continuous drain current of 179A for heavy current loads. Maximum drain source voltage of 100V suitable for high voltage switching tasks. Low drain source resistance of 2.8mΩ minimizes conduction losses.

Power dissipation up to 75W allows sustained thermal handling. Fast gate transition with 38nC typical gate charge at Vgs. Robust gate source voltage rating of 20V enhances drive headroom. Wide operating temperature range from -55°C to 175°C for tough environments.

Compact surface-mount TDSON package with 8 pins supports efficient board assembly. Ideal for DC-DC converters, motor drives, synchronous rectifiers, automotive control electronics, server PSU, and telecom power modules. Explore the broad range of MOSFET devices at EnvMart for your industrial, automotive, and electronic component needs.

Infineon ISC N-Channel MOSFET 179A 100V 8-Pin TDSON Surface Mount ISC030N10NM6ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 179A, making it suitable for heavy current loads.

This MOSFET has a maximum drain source voltage of 100V, which is suitable for high voltage switching tasks.

It features a low maximum drain source resistance of 2.8mΩ, which helps minimize conduction losses.

The maximum power dissipation rating is 75W, allowing for sustained thermal handling under heavy duty operations.

The typical gate charge at specified gate voltage (Vgs) is 38nC, enabling fast switching speeds.

It operates within a wide temperature range from -55°C to 175°C, making it suitable for tough environments.

This model comes in a compact 8-pin TDSON surface mount package, which supports efficient board assembly.

The maximum gate source voltage rating is 20V, which enhances the drive capability of the MOSFET.

Common applications include high-current DC-DC converters, motor-drive stages, synchronous rectifiers, and automotive control electronics.

The dimensions are 4.4mm in height, 3.8mm in length, and 1.1mm in width.

This unit is an N-channel MOSFET, which is commonly used in power switching applications.

The ISC030N10NM6ATMA1 is manufactured in India.

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