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Infineon iPB Type P-Channel MOSFET, 63 A Continuous Drain Current, 100 V Drain Source Voltage, 3-Pin TO-263 IPB320P10LMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB320P10LMATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 63A |
| Maximum Drain Source Voltage Vds | 100V |
| Channel Mode | N |
Key Features
- The device operates as a P-channel MOSFET suitable for battery management and load switching applications.
- It provides avalanche ruggedness for robust performance and reliability.
- The standard industry footprint and surface mount design facilitate easy PCB integration.
- Fast switching characteristics enable efficiency in high and low switching frequency applications.
- This MOSFET enhances circuit design by reducing complexity in medium and low power circuits.
- It interfaces easily with microcontroller units due to its normal level type and wide RDS(on) range.
- The product is ideal for use in industrial automation and battery management systems.
Product Description
Infineon IPB320P10LMATMA1 is an iPB Type P-Channel MOSFET designed to handle a continuous drain current of 63 A and a maximum drain-source voltage of 100 V. Packaged in a TO-263 3-pin surface mount configuration, this device is engineered to provide high-quality, reliable performance for various industrial and electronic applications.
This MOSFET employs Infineon's OptiMOS™ technology, which offers advantages such as fast switching speeds and avalanche ruggedness that help protect circuits against transient voltage spikes. The P-channel configuration reduces design complexity in medium and low power applications, making it a preferred choice for battery management and load switch applications.
The device's wide RDS(on) range improves efficiency at low loads by minimizing gate charge (Qg), facilitating better power management. Its industry standard footprint eases PCB layout and integration.
Typical applications include battery management systems, reverse polarity protection, and industrial automation fields that demand robust and efficient semiconductor components. Its surface mount format suits automated manufacturing processes, enhancing production throughput.
The MOSFET is designed with a 3-pin TO-263 package for surface mount technology compatibility. It supports a maximum continuous drain current of 63 A and a voltage rating of 100 V. Fast switching and avalanche ruggedness enhance durability and performance under demanding electrical conditions.
Its P-channel type reduces complexity and allows straightforward interfacing with control units. The device is ideal for use in battery management and industrial automation applications requiring efficient power switching.
Choose Infineon's IPB320P10LMATMA1 for applications demanding reliable, high-performance semiconductor devices with industry-standard packaging and enhanced switching features. Explore related MOSFET products and advanced semiconductor components at EnvMart.
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Frequently Asked Questions
The Infineon IPB320P10LMATMA1 can handle a maximum continuous drain current of 63 A.
This model has a maximum drain-source voltage rating of 100 V.
It is packaged in a TO-263 3-pin surface mount configuration.
This P-channel MOSFET is suitable for battery management and load switching applications, as well as industrial automation.
It employs Infineon's OptiMOS™ technology, which offers fast switching speeds and avalanche ruggedness.
The P-channel configuration reduces design complexity in medium and low power applications, facilitating easier integration with control units.
The IPB320P10LMATMA1 has a pin count of 3.
The country of origin for this product is India.
The channel mode for this model is N.
The wide RDS(on) range improves efficiency at low loads by minimizing gate charge (Qg), enhancing power management.
This MOSFET uses a surface mount type for installation.
Fast switching characteristics and avalanche ruggedness enhance the performance and reliability of this device under demanding conditions.
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