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Infineon HEXFET N-Channel MOSFET 180 A 100 V Enhancement 3-Pin TO-220 IRFB4110PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB4110PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 370W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports high-performance power applications with 180 A continuous drain current.
- Features a drain-source voltage of 100 V for versatile circuit compatibility.
- Enhancement mode N-channel design ensures efficient high-speed switching.
- Low on-resistance Rds(on) around 4.5mΩ reduces conduction losses.
- High power dissipation rating of 370 W enables stable operation under load.
- Operates reliably within the temperature range of -55°C to +175°C.
- Compact TO-220 package with 3 pins for through-hole mounting.
- Thermally robust with junction-to-case thermal resistance of 0.402°C/W.
Product Description
Infineon IRFB4110PBF HEXFET N-Channel MOSFET is a precision-engineered power transistor designed for demanding industrial and electronic applications requiring efficient high-current switching and power dissipation. It features a 3-pin TO-220 package for convenient through-hole mounting and houses an enhancement mode N-channel MOSFET with a maximum continuous drain current of 180 A and a drain-source voltage of 100 V.
The device exhibits a low on-resistance of approximately 4.5 milliohms which significantly reduces power loss and boosts efficiency. Its thermal characteristics allow a maximum power dissipation of 370 W with a maximum operating temperature of up to 175°C, ensuring reliable performance in challenging thermal environments.
This MOSFET supports high-speed switching, making it ideal for synchronous rectification in power supplies, uninterruptible power supply (UPS) systems, and hard-switched or high-frequency circuits. Thermal management is facilitated by junction-to-case thermal resistance of 0.402°C/W and case-to-sink thermal resistance of 0.50°C/W which help dissipate heat efficiently.
The robust construction and full characterization on avalanche and dynamic dv/dt ruggedness make this transistor well-suited for automation, manufacturing, electrical equipment, and high-performance power electronics.
Supports a high maximum continuous drain current of 180 A. Rated for a maximum drain-source voltage of 100 V. Enhancement mode N-channel configuration enables rapid switching. Low Rds(on) reduces conduction losses improving energy efficiency.
High power dissipation capability of 370 W for demanding loads. Wide operating temperature range from -55°C to 175°C ensures versatile use. TO-220 package offers easy mounting and thermal management. Designed specifically for power electronic applications including power supplies and UPS.
Reliable under transient voltage spikes due to avalanche energy rating. Ideal for industrial and automation sectors requiring rugged performance.
This Infineon MOSFET is a reliable choice for engineers and designers seeking high current handling and efficient power dissipation in compact form. It is part of the EnvMart Electronics & Electricals Semiconductor MOSFET category. Browse related products for complementary components and solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 180 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
The on-resistance (Rds(on)) is approximately 4.5 milliohms, which helps reduce conduction losses.
It has a maximum power dissipation rating of 370 W, allowing stable operation under load.
The operating temperature range is from -55°C to 175°C, making it suitable for various applications.
This model uses a TO-220 package type, which is designed for through-hole mounting.
It features a 3-pin configuration for easy integration into circuits.
The typical gate charge (Qg) at Vgs is 150 nC.
The junction-to-case thermal resistance is 0.402°C/W, aiding in effective thermal management.
It is suitable for high-performance power applications such as power supplies and UPS systems.
This model is an N-channel MOSFET, designed for enhancement mode operation.
The forward voltage (Vf) for this MOSFET is 1.3 V.
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