Infineon BSZ N-Channel MOSFET 212 A Continuous Drain Current 40 V Drain-Source Voltage, 8-Pin SuperSO8 5x6 BSZ075N08NS5ATMA1

Infineon BSZ075N08NS5ATMA1 is a high-current N-Channel MOSFET semiconductor device engineered for industrial and commercial electronic power management systems. This device features a maximum continuous drain current of 212 amperes and a drain-source voltage rating of 40 volts, making it suitable for medium-voltage power stages requiring efficient switching.

The MOSFET is housed in a compact 8-pin SuperSO8 5x6 surface-mount package, facilitating dense PCB designs while enabling effective thermal management at a maximum power dissipation of 81 watts. It exhibits a low drain-source on-resistance of 0.7 milliohms, which significantly minimizes conduction losses under heavy load conditions.

Designed to operate reliably across a broad temperature range from -55°C to +150°C, this MOSFET ensures robustness in demanding industrial environments. The typical gate charge of 80 nanocoulombs at a specified gate voltage supports optimal gate-drive energy management and fast switching transitions. Additionally, the device tolerates a maximum gate-source voltage of 20 volts, granting flexibility in gate drive circuitry design.

Compact 8-pin SuperSO8 5 x 6 surface-mount package supports space-efficient PCB layout. Maximum continuous drain current of 212 A enables high current-carrying applications. 40 V maximum drain-source voltage rating suitable for moderate-voltage power stages.

Low 0.7 mΩ drain-source resistance reduces conduction losses and thermal stress. Maximum power dissipation of 81 W allows for significant heat dissipation capacity. Wide operating temperature range from -55°C to +150°C for industrial use.

Typical gate charge of 80 nC facilitates efficient switching performance. RoHS-compliant design ensures adherence to environmental safety standards.

This MOSFET is ideal for implementation in high-current DC-DC converter stages, motor drive half-bridge legs in power electronics, synchronous rectification in power supplies, battery management and distribution systems, as well as switching elements in server power rails. Its robust design and technical characteristics make it a reliable choice for a variety of demanding power electronics applications.

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