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Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC019N04NSGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.35mm |
| Model | BSC019N04NSGATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 81nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.85V |
Key Features
- OptiMOS 3 series provides high-performance power MOSFET for surface mount applications.
- Low on-resistance of 1.9 mΩ ensures efficient power conduction.
- 8-pin TDSON package facilitates compact surface mount assembly.
- Fast switching capability optimized for SMPS and DC/DC converters.
- Operates reliably between -55°C and 150°C temperature range.
- Maximum power dissipation of 125 W supports high power designs.
- Typical gate charge of 81 nC at Vgs enhances switching efficiency.
- Enhanced gate voltage range supports robust operation up to ±20 V.
Product Description
Infineon BSC019N04NSGATMA1 OptiMOS 3 N-Channel MOSFET is engineered for high-efficiency power switching applications with a continuous drain current rating of 100 A and a drain-source voltage limit of 40 V.
This enhancement mode MOSFET is housed in a low-profile 8-pin TDSON package, measuring 6.35 mm in length, 5.35 mm in width, and 1.1 mm in height, ensuring compact integration on printed circuit boards.
With an extremely low on-resistance of 1.9 milliohms and fast gate switching characteristics (81 nC typical gate charge), it is ideal for switched-mode power supplies (SMPS), DC/DC converters, and other high-density power management tasks.
The device operates reliably over a wide temperature range from -55°C up to 150°C, supporting demanding industrial environments without degradation in performance.
Infineon OptiMOS 3 series MOSFETs are known for their advanced technology optimized for power density, energy efficiency, and thermal performance, making them suitable for industrial, automotive, and computing power applications.
High continuous current rating with low conduction losses. Compact surface-mount package suitable for high-density board designs. Robust voltage and temperature specifications enhance operational longevity. Optimized gate charge characteristics for fast response switching.
Pb-free plating supports lead-free manufacturing compliance. Available in multiples suitable for bulk manufacturing and assembly line setups, these MOSFETs are essential components for efficient power regulation and conversion systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It features a low on-resistance of 1.9 mΩ, ensuring efficient power conduction.
The typical gate charge is 81 nC at Vgs, which enhances switching efficiency.
The package measures 6.35 mm in length, 5.35 mm in width, and 1.1 mm in height.
It operates reliably within a temperature range of -55°C to 150°C.
The maximum power dissipation is rated at 125 W, supporting high power designs.
It is suitable for switched-mode power supplies (SMPS), DC/DC converters, and high-density power management tasks.
The maximum gate-source voltage is ±20 V, allowing for robust operation.
This model supports surface mounting, making it suitable for compact integration on printed circuit boards.
It is an N-channel MOSFET, which is commonly used for power switching applications.
The country of origin for this MOSFET is India.
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