Infineon HEXFET N-Channel MOSFET, 11 A, 55 V, Enhancement Mode, 3-Pin TO-252 AUIRFR9024NTRL

Infineon AUIRFR9024NTRL is a power MOSFET featuring the advanced HEXFET technology and designed as an N-channel enhancement mode device. This MOSFET supports a maximum continuous drain current of 11 A with a maximum drain-source voltage of 55 V, making it suitable for a variety of power switching and amplification applications.

Packaged in a compact TO-252 3-pin surface mount format, the device offers an ultra-low on-resistance of 0.18 mΩ, providing high efficiency and low conduction losses for sensitive electronics and automotive systems. It operates reliably in a wide temperature range from -55°C up to 150°C, accommodating harsh industrial environments.

The AUIRFR9024NTRL has a typical gate charge of 19 nC at the maximum gate-source voltage of 20 V, enabling fast switching speeds crucial for high-frequency power electronics and DC-DC converters. Its maximum power dissipation rating of 38 W supports effective thermal handling in demanding circuits.

This MOSFET is lead-free and RoHS compliant, adhering to modern environmental standards. The precise package dimensions (6.22 mm length, 6.73 mm width, 2.39 mm height) support efficient PCB layout and high-density mounting.

Ideal use cases include automotive electronics, power management, industrial control, and general electronic circuit design requiring a robust and efficient N-channel MOSFET. Maximum 11 A drain current rating for high power applications.

55 V drain-source voltage withstand capacity. Ultra-low Rds(on) value reduces power losses. High operating temperature range. Fast switching facilitated by low gate charge. Surface mount TO-252 package for compact circuit integration.

Lead-free and RoHS compliant manufacturing. Explore more Infineon semiconductor products and components at EnvMart for reliable industrial and electronic solutions.