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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R080P7XKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 37A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 29W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPA60R080P7XKSA1 CoolMOS CE Series N-Channel MOSFET is a high-voltage switching transistor rated for 37 A continuous drain current and a 500 V maximum drain-source voltage. It operates using enhancement mode and is supplied in a 3-pin TO-220 through-hole package, ideal for power-conversion and control applications requiring robust voltage tolerance and reliability.
The device features an 80 milliohm maximum drain-source resistance (Rds(on)) that minimizes conduction losses during load periods, and a typical gate charge of 51 nC that ensures controlled switching energy demand. Its maximum gate-source voltage is rated at 20 V, requiring gate drive designs to operate within this limit to avoid damaging the gate oxide.
Capable of dissipating up to 29 W, this MOSFET supports sustained power handling in switch-mode power supplies, industrial motor drives, and inrush current limiting circuits. It functions reliably within an operating temperature range from -55 °C to 150 °C, allowing performance in diverse industrial and laboratory environments. The TO-220 package allows through-hole mounting with mechanical fastening and adequate heatsinking for thermal management.
Typical applications include offline switch-mode power supplies, high-voltage DC-DC conversion stages, industrial motor front ends, and general-purpose power switching in electronic equipment and laboratory rigs.
Supports continuous drain current of 37 A with efficient conduction. Robust 500 V drain-source voltage rating for high-voltage tolerance. Low Rds(on) of 80 mΩ for reduced power loss during operation. Maximum power dissipation rating of 29 W for sustained use.
Wide operating temperature from -55 °C to 150 °C for reliable thermal endurance. Typical gate charge of 51 nC ensures predictable switching performance. Maximum gate-source voltage of 20 V to safeguard gate oxide. 3-pin TO-220 package enables convenient through-hole mounting and heatsink attachment.
Suitable for various industrial, laboratory, and power electronics applications. Explore more Infineon MOSFETs and semiconductor solutions for power electronics and industrial control purposes available on EnvMart.
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