$1.36
$1.32
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon OptiMOS-T2 N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262 IPI80N06S4L07AKSA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 23.45mm |
| Length | 10.2mm |
| Model | IPI80N06S4L07AKSA2 |
| Width | 4.4mm |
| Mount Type | Through Hole |
| Series | OptiMOS-T2 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-262 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 6.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.3V |
Key Features
- High-performance OptiMOS-T2 series MOSFET ideal for energy efficient power applications.
- Features a 3-pin through hole TO-262 package for reliable mounting.
- Designed for operation between -55°C and 175°C ensuring wide temperature tolerance.
- Maximum power dissipation of 79 W supports demanding electronic loads.
- Enhancement mode transistor with low 6.7 milliohm drain-source resistance for efficiency.
- Typical gate charge of 58 nC at Vgs further reduces switching losses.
- Maximum gate-source voltage rating of 16 V protects the device within safe operational limits.
- Automotive AEC-Q101 qualified ensuring suitability for automotive and industrial applications.
Product Description
Infineon IPI80N06S4L07AKSA2 is a high-quality OptiMOS-T2 N-Channel MOSFET designed for efficient power management in industrial, automotive, and electronic applications. The transistor's 80 A maximum continuous drain current and 60 V drain-source voltage support robust switching and amplification tasks within demanding systems.
Its 3-pin TO-262 through-hole package facilitates secure mounting and easy integration into printed circuit boards. The device features a low drain-source resistance of 6.7 milliohms, reducing power losses and enhancing energy efficiency.
Operating temperatures range from -55°C up to 175°C, making it reliable in harsh environmental conditions. The 79 W maximum power dissipation allows handling of significant thermal loads without degradation.
Designed in enhancement mode with a typical gate charge of 58 nC at Vgs, the MOSFET exhibits fast switching characteristics essential for modern electronics. Maximum gate-source voltage tolerance of 16 V ensures operational safety and durability.
This MOSFET is AEC-Q101 automotive standard qualified, making it applicable for automotive electronics, industrial machines, and power supplies requiring high reliability and performance under extreme temperature ranges.
High current rating of 80 A and voltage of 60 V for versatile power applications. Low on-resistance and gate charge optimize efficiency and speed. Robust TO-262 package type for through-hole installation. Wide operating temperature range (-55°C to 175°C) supports industrial usage.
Automotive AEC-Q101 compliant ensuring high quality and reliability. This Infineon MOSFET model IPI80N06S4L07AKSA2 is an excellent choice for power electronic designs including voltage regulation, motor drives, and power switching circuits.
Explore more Infineon semiconductor products and related components in the Electronics & Electricals category at EnvMart for advanced project and industrial requirements.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 80 A.
It can handle a maximum drain-source voltage of 60 V.
The typical gate charge at Vgs is 58 nC.
The maximum power dissipation rating is 79 W.
This MOSFET operates within a temperature range of -55°C to 175°C.
It uses a 3-pin TO-262 package for mounting.
The maximum gate-source voltage rating is 16 V.
The drain-source resistance is 6.7 milliohms.
Yes, this model is AEC-Q101 qualified, making it suitable for automotive applications.
The height of this model is 23.45 mm.
The dimensions are 10.2 mm in length, 4.4 mm in width, and 23.45 mm in height.
This model is an N-channel enhancement mode transistor.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$1.36
$1.32
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent