World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Infineon CoolMOS P7 N-Channel MOSFET 34A 600V 3-Pin TO-247 IPW60R099P7XKSA1

Free Delivery in India | Lowest Global Shipping Charges

Infineon CoolMOS P7 N-Channel MOSFET 34A 600V 3-Pin TO-247 IPW60R099P7XKSA1

Name: Infineon CoolMOS P7 N-Channel MOSFET 34A 600V 3-Pin TO-247 IPW60R099P7XKSA1
Brand: Infineon
SKU: 412088
Price: 3.73 USD
Availability: InStock



Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPW60R099P7XKSA1
Mount Type	Through Hole
Series	CoolMOS P7
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	34A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	99mΩ
Maximum Power Dissipation Pd	117W
Typical Gate Charge Qg @ Vgs	45nC
Maximum Gate Source Voltage Vgs	4V
Forward Voltage Vf	900mV

Key Features

Maximum continuous drain current of 34 amperes ensures high power handling.
Rated for a maximum drain-source voltage of 600 volts for robust performance.
Low typical gate charge of 45 nanocoulombs enhances switching efficiency.
Integrated RG reduces MOSFET oscillation sensitivity.
Maximum power dissipation of 117 watts supports demanding applications.
Operating temperature range from -55°C to 150°C for versatile use.
Through hole mount and 3-pin configuration in the TO-247 package.
Low maximum drain-source resistance of 99 milliohms reduces conduction losses.

Product Description

Infineon IPW60R099P7XKSA1 CoolMOS P7 series is a high-efficiency N-Channel MOSFET designed for power electronics requiring high current and voltage handling capabilities. Featuring a robust 3-pin TO-247 package, it accommodates maximum continuous drain current of 34 amperes and a maximum drain-source voltage of 600 volts, suitable for industrial, power supply, and motor control applications.

This MOSFET is built on the seventh generation CoolMOS platform, optimized for best-in-class Ron×A and low gate charge, improving switching efficiency which is critical in high-frequency and power-conversion circuits. The integrated RG resistor reduces oscillation sensitivity, enhancing device stability during operation.

The device dissipates up to 117 watts of power, supporting demanding workloads. Its operating temperature range from -55°C to 150°C allows use in harsh thermal environments common in industrial and automotive sectors. The TO-247 through-hole mount eases assembly and cooling requirements.

Key electrical characteristics include a gate-source voltage limit of ±4 volts and low drain-source resistance of 99 milliohms, ensuring efficient conduction and reduced losses. The forward voltage drop is a modest 900 millivolts, complementing the device's efficiency for power switching and conversion.

This MOSFET is ideal for industrial automation, power supplies, inverters, and automotive electronics, delivering reliable and efficient semiconductor switching performance. Maximum continuous drain current of 34 amperes.

Maximum drain-source voltage of 600 volts. Low gate charge of 45 nanocoulombs at Vgs=4V. Integrated RG for oscillation stabilization. Power dissipation capacity of 117 watts. Wide operating temperature range: -55°C to 150°C.

Through hole mount in TO-247 package with 3 pins. Low drain-source resistance of 99 milliohms. Forward voltage of 900 millivolts. Gate-source voltage limited to 4 volts. Explore a comprehensive range of MOSFETs and power semiconductors on EnvMart to meet your industrial and electronic component requirements.