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Infineon HEXFET N-Channel MOSFET 82A 75V Surface Mount TO-263 3-Pin IRF2807STRLPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IRF2807STRLPBF
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 82A
Maximum Drain Source Voltage Vds 75V
Maximum Drain Source Resistance Rds 13mΩ
Maximum Power Dissipation Pd 230W
Typical Gate Charge Qg @ Vgs 160nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • HEXFET technology ensures low on-resistance for efficient power handling.
  • Maximum power dissipation of 230W supports high-performance applications.
  • Robust device design provides rugged and reliable switching capabilities.
  • Operating temperature range from -55°C to 175°C for diverse environments.
  • Includes a minimum gate charge of 160nC for fast switching speed.
  • Maximum gate-source voltage rated at 20V enhances device tolerance.
  • Three-pin TO-263 package facilitates easy surface mounting on PCBs.
  • Forward voltage is 1.2V ensuring predictable conduction characteristics.

Product Description

Infineon IRF2807STRLPBF HEXFET N-Channel MOSFET is a high-current semiconductor device engineered with advanced processing to achieve extremely low on-resistance per silicon area. This makes it highly suitable for power management in industrial, automotive, and consumer electronics applications.

The MOSFET features a maximum continuous drain current of 82 amperes and a maximum drain-source voltage rating of 75 volts, ensuring robust operation in demanding circuits. Packaged in a TO-263 surface mount format with three pins, it supports ease of integration on printed circuit boards.

With a maximum power dissipation of 230 watts and a wide operating temperature range of -55°C to 175°C, this device is designed for high-performance and reliable switching under harsh conditions. The device also includes a typical gate charge of 160 nanocoulombs and a forward voltage drop of 1.2 volts for efficient and fast switching performance.

The rugged design allows full avalanche rating, protecting it against voltage spikes common in inductive load switching. Its HEXFET construction yields low resistance and efficient energy conversion, making the IRF2807STRLPBF a preferred choice in power electronics components.

Utilizes HEXFET technology for minimal conduction losses. High maximum continuous drain current accommodates heavy loads. Surface mount TO-263 package ensures compact and effective PCB integration. Avalanche rated for enhanced system protection.

Wide temperature performance range suitable for diverse industrial and automotive use. Fast switching speeds provide efficiency in power regulation circuits.

This semiconductor component is ideal for industrial automation, power supply regulation, motor control, and other electronic equipment requiring efficient high-current switching elements. It aligns well with industrial, automotive, and electronic manufacturing applications requiring durable and efficient MOSFET devices.

Explore more power semiconductors and discrete components in the Electronics & Electricals section on EnvMart.

Infineon HEXFET N-Channel MOSFET 82A 75V Surface Mount TO-263 3-Pin IRF2807STRLPBF
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Frequently Asked Questions

The maximum continuous drain current for the IRF2807STRLPBF is 82 amperes.

It operates within a temperature range of -55°C to 175°C.

The maximum drain-source voltage rating is 75 volts.

This model is packaged in a TO-263 surface mount format with three pins.

The typical gate charge is 160 nanocoulombs.

The maximum power dissipation is 230 watts.

The forward voltage drop is 1.2 volts.

The maximum gate-source voltage is rated at 20 volts.

It features an N-channel configuration.

HEXFET technology ensures low on-resistance for efficient power handling and minimal conduction losses.

Yes, it is designed for high-performance applications, including industrial, automotive, and consumer electronics.

This model is suitable for applications such as power supply regulation, motor control, and industrial automation.

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