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Infineon 600V CoolMOS P7 N-Channel MOSFET, 10 A, 600 V Enhancement Mode, 5-Pin ThinPAK IPL60R365P7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 8.1mm |
| Model | IPL60R365P7AUMA1 |
| Width | 8.1mm |
| Mount Type | Surface |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK |
| Minimum Operating Temperature | -40°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 365mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 46W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- The device supports a maximum continuous drain current of 10 A.
- Has a maximum drain-source voltage of 600 V suitable for high voltage applications.
- Features a low maximum drain-source resistance of 365 milliohms.
- Packaged in a 5-pin ThinPAK surface mount package for compact PCB design.
- Operational temperature range spans from -40°C to 150°C for robustness in diverse environments.
- Enhancement mode channel type with a maximum gate-source voltage of 20 V.
- Maximum power dissipation is 46 W allowing reliable thermal performance.
- Typical gate charge is low at 13 nC, contributing to improved switching efficiency.
Product Description
Infineon IPL60R365P7AUMA1 is a 600V CoolMOS P7 N-Channel MOSFET with a maximum continuous drain current of 10 A and a maximum drain-source voltage of 600 V. It employs an enhancement mode channel and comes in a 5-pin ThinPAK surface mount package, making it suitable for compact power electronics designs.
This device offers best-in-class low on-resistance (365 milliohms) combined with a low gate charge of 13 nC, resulting in high efficiency and reduced switching losses for power management applications. It features integrated rugged body diode protection and an integrated gate resistor to reduce MOSFET oscillation sensitivity, enhancing device reliability.
The MOSFET operates efficiently across a temperature range from -40°C to 150°C and can dissipate up to 46 W of power, ensuring robust performance in industrial, consumer electronics, automotive, and power supply systems.
Its compact 8.1 mm length and width, and 1.1 mm height package allow for dense PCB layouts in space-constrained environments. The device is RoHS compliant and does not have any specific automotive certifications.
Typical applications include industrial motor drives, power supplies, and electronic consumer devices requiring efficient, high-voltage MOSFETs. The device supports a maximum continuous drain current of 10 A. Has a maximum drain-source voltage of 600 V suitable for high voltage applications.
Features a low maximum drain-source resistance of 365 milliohms. Packaged in a 5-pin ThinPAK surface mount package for compact PCB design. Operational temperature range spans from -40°C to 150°C for robustness in diverse environments.
Enhancement mode channel type with a maximum gate-source voltage of 20 V. Maximum power dissipation is 46 W allowing reliable thermal performance. Typical gate charge is low at 13 nC, contributing to improved switching efficiency.
Dimensions measure 8.1 mm × 8.1 mm × 1.1 mm, providing a small footprint. Explore more products in the Semiconductors MOSFET category at EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 10 A.
It has a maximum drain-source voltage of 600 V, making it suitable for high voltage applications.
The maximum drain-source resistance is 365 milliohms, which contributes to its efficiency.
The operational temperature range spans from -40°C to 150°C, allowing it to perform in diverse environments.
This MOSFET can dissipate a maximum of 46 W, ensuring reliable thermal performance.
The typical gate charge is low at 13 nC, which helps improve switching efficiency.
The dimensions of the package are 8.1 mm in length, 8.1 mm in width, and 1.1 mm in height.
It employs an enhancement mode N-channel design.
The maximum gate-source voltage is 20 V.
Typical applications include industrial motor drives, power supplies, and electronic consumer devices requiring efficient, high-voltage MOSFETs.
It is packaged in a 5-pin ThinPAK surface mount package, suitable for compact PCB designs.
The country of origin for this device is India.
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