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onsemi NTH Silicon Carbide Power N-Channel MOSFET 29A 1.2kV TO-247 4-Pin Enhancement NTH4L080N120SC1
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 22.74mm |
| Length | 15.2mm |
| Model | NTH4L080N120SC1 |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | NTH |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 25V |
Key Features
- Maximum continuous drain current of 29 Amperes ensuring efficient load handling.
- Drain-source voltage rating of 1.2 kilovolts suitable for high voltage circuits.
- Low drain-source resistance of 110 milliohms providing reduced conduction losses.
- Enhancement mode channel operation with a maximum gate-source voltage of 25 Volts.
- Maximum power dissipation of 170 Watts enabling robust thermal management.
- Wide operating temperature range from -55°C to 175°C for industrial environments.
- Compact TO-247 package with 4 pins for through-hole mounting.
- RoHS compliant and lead-free construction supporting environmental standards.
Product Description
onsemi NTH4L080N120SC1 is a silicon carbide (SiC) power MOSFET featuring an N-channel enhancement mode configuration. It operates at a maximum continuous drain current of 29 Amperes and withstands a drain-source voltage of 1.2 kV. The device is supplied in a 4-pin TO-247 through-hole package designed for ease of integration into power electronics systems.
This MOSFET is optimized for high-efficiency power switching with an ultra-low drain-source resistance of 110 milliohms and a typical gate charge of 56 nC at Vgs. Its robust power dissipation rating of 170 Watts allows for reliable operation under demanding conditions.
The wide operating temperature range from -55°C to 175°C makes it suitable for industrial, automotive, and renewable energy applications including uninterruptible power supplies, boost inverters, industrial motor drives, and photovoltaic chargers.
The device complies with RoHS standards and is free from lead, supporting environmentally responsible design. Its construction ensures high reliability including 100% avalanche testing for ruggedness.
Maximum continuous drain current of 29 Amperes ensuring efficient load handling. Drain-source voltage rating of 1.2 kilovolts suitable for high voltage circuits. Low drain-source resistance of 110 milliohms providing reduced conduction losses.
Enhancement mode channel operation with a maximum gate-source voltage of 25 Volts. Maximum power dissipation of 170 Watts enabling robust thermal management. Wide operating temperature range from -55°C to 175°C for industrial environments.
Compact TO-247 package with 4 pins for through-hole mounting. RoHS compliant and lead-free construction supporting environmental standards.
Ideal for use in electronic power systems and industrial applications requiring high efficiency, thermal stability, and reliable performance. Explore more semiconductor components and power MOSFETs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 29 Amperes, ensuring efficient load handling.
It has a drain-source voltage rating of 1.2 kilovolts, making it suitable for high voltage circuits.
The device features a low drain-source resistance of 110 milliohms, which helps reduce conduction losses.
The maximum power dissipation is rated at 170 Watts, allowing for robust thermal management.
This MOSFET operates within a wide temperature range from -55°C to 175°C, suitable for industrial environments.
It is supplied in a compact TO-247 package with 4 pins for through-hole mounting.
The maximum gate-source voltage is 25 Volts, which is typical for enhancement mode devices.
The typical gate charge at Vgs is 56 nC, which is important for switching applications.
Yes, it is RoHS compliant and lead-free, supporting environmentally responsible design.
This model features an N-channel enhancement mode configuration, which is common in power applications.
The height of the NTH4L080N120SC1 is 22.74 mm.
The country of origin for this model is India.
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