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onsemi Type P-Channel MOSFET, 760 mA, 20 V Enhancement Mode, 3-Pin Surface Mount SC-89 Package NTE4151PT1G

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onsemi Type P-Channel MOSFET, 760 mA, 20 V Enhancement Mode, 3-Pin Surface Mount SC-89 Package NTE4151PT1G

Name: onsemi Type P-Channel MOSFET, 760 mA, 20 V Enhancement Mode, 3-Pin Surface Mount SC-89 Package NTE4151PT1G
Brand: onsemi
SKU: 409605
Price: 0.16 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	800μm
Length	1.7mm
Model	NTE4151PT1G
Width	950μm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SC-89
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	760mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	1Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	310mW
Typical Gate Charge Qg @ Vgs	2.1nC
Maximum Gate Source Voltage Vgs	-6, +6V
Forward Voltage Vf	-1.1V

Key Features

Provides an enhancement mode P-Channel MOSFET operation.
Offers maximum continuous drain current of 760 milliamps.
Supports maximum drain-source voltage of 20 volts.
Equipped with a compact 3-pin SC-89 surface mount package.
Maximum power dissipation rating of 310 milliwatts for efficient thermal management.
Operates within a temperature range from -55°C to 150°C for diverse environments.
Features typical gate charge of 2.1 nanocoulombs at specified gate voltage.
Forward voltage is approximately -1.1 volts during conduction.

Product Description

onsemi NTE4151PT1G is a high-quality P-Channel power MOSFET designed for surface mount applications. With a maximum continuous drain current of 760 mA and a maximum drain-source voltage of 20 V, it is suitable for various electronic power management circuits and discrete semiconductor needs.

The enhancement mode transistor features a compact 3-pin SC-89 package enabling efficient PCB space utilization. Its power dissipation capacity of 310 mW ensures reliable performance in both typical and robust electrical load applications.

The device’s typical gate charge of 2.1 nC at specific gate voltages offers quick switching capabilities with enhanced control, while the gate-source voltage range of -6 to +6 V supports versatile drive requirements. Its robust operating temperature range from -55°C to 150°C makes it applicable for automotive, industrial, and consumer electronic uses where temperature extremes are a factor.

Physical dimensions are 1.7 mm in length, 950 μm width, and 800 μm height, making it suitable for compact electronic modules. The forward voltage drop of approximately -1.1 V is suitable for power-sensitive designs.

Enhancement mode P-Channel MOSFET. 760 mA maximum continuous drain current. 20 V maximum drain-source voltage. Compact 3-pin surface mount SC-89 package. Maximum power dissipation of 310 mW. Operating temperature range from -55°C to 150°C.

Typical gate charge of 2.1 nC at Vgs. Gate-source voltage tolerance between -6 and +6 V. Physical size optimized for space-constrained applications.

This onsemi MOSFET is ideal for industrial, automotive, consumer electronics, and power management uses. Its reliable specifications ensure efficient switching, durability, and functionality for embedded semiconductor design requirements.

Explore additional semiconductor and MOSFET products within the comprehensive EnvMart catalog to find compatible components and accessories tailored to your project’s needs.