onsemi P-Channel MOSFET, Type , 470 mA, 30 V Enhancement, 3-Pin SOT-23 BSH203,215

Nexperia BSH203,215 is a Type P-Channel MOSFET designed for low power switching and amplification applications in electronics. It features a maximum continuous drain current of 470 mA and can withstand a maximum drain-source voltage of 30 V while maintaining high efficiency due to a low Rds(on) of 900 mΩ.

The MOSFET is housed in a compact 3-pin SOT-23 surface mount package, making it suitable for compact circuit boards and space-constrained environments. It supports enhancement mode operation and offers a maximum power dissipation of 417 mW.

This device operates reliably across a broad temperature range, from -55°C minimum to 150°C maximum, catering to industrial, automotive, and consumer electronic use cases. The typical gate charge of 2.2 nC allows for fast switching speeds and efficient gate drive performance.

Dimensions of 3 mm length, 1.4 mm width, and 1 mm height facilitate easy integration into surface mount designs. The maximum gate-source voltage rating of -8 V to +8 V offers necessary protection from voltage surges and ensures robust performance.

Key features include a low forward voltage of -1.3 V and effective mounting options for surface assembly. This MOSFET is ideal for power management, signal amplification, and switching in a variety of electronic devices and power supply modules.

This MOSFET features an enhancement mode channel for efficient switching applications. Maximum power dissipation is rated at 417 mW, suitable for low power circuits. Maximum drain-source resistance (Rds) is 900 mΩ, ensuring low conduction losses.

Operates reliably over a temperature range from -55°C to 150°C. Typical gate charge is 2.2 nC at gate-source voltage, enabling fast switching. Compact footprint with dimensions of 3 mm length, 1.4 mm width, and 1 mm height.

Maximum gate-source voltage ranges from -8 V to +8 V for device protection. Forward voltage drop of -1.3 V suitable for controlled conduction.

This product is applicable in industrial electronics, power management, automotive electronics, manufacturing control systems, telecommunications, and laboratory electronic assemblies.

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