onsemi PowerTrench N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6690A

onsemi FDS6690A PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor device designed for power management and switching applications in industries such as electronics manufacturing, automotive electronics, and industrial control systems. This 8-pin SOIC surface-mount MOSFET provides a continuous drain current of 11 A and can withstand a maximum drain-source voltage of 30 V, making it suitable for low voltage power switching tasks.

The PowerTrench technology employed offers reduced conduction losses due to the low typical drain-source resistance (Rds) of 13 milliohms. Operating in enhancement mode, the transistor delivers efficient switching with a typical gate charge (Qg) of only 12 nC at a gate-source voltage (Vgs) of 4.5 V, contributing to reduced switching losses and improved thermal performance.

It can dissipate up to 2.5 watts of power and is designed to operate reliably within a broad temperature range from -55°C to 150°C, suitable for demanding industrial and automotive environments. The forward voltage drop is about 700 mV, supporting efficient current flow during conduction.

The package dimensions are compact, with a length of 5 mm, width of 4 mm, and height of 1.5 mm, fitting into standard SOIC footprints for easy PCB integration. Its maximum gate-source voltage rating of ±20 V ensures robust control signal tolerance.

This device does not carry specific automotive standard certifications but conforms to RoHS environmental compliance directives. It is widely applicable in power conversion, motor drives, power supplies, and other semiconductor switching or amplification applications in commercial and industrial sectors.

This MOSFET is designed for surface mount applications with PowerTrench technology. It features a low drain-source resistance of 13 milliohms enhancing efficiency. The device operates in enhancement mode and supports a maximum power dissipation of 2.5 W.

Typical gate charge at Vgs is 12 nC, minimizing switching losses. It is rated for operation from -55°C to 150°C for wide temperature range applications. Package dimensions are 5 mm in length, 4 mm width, and 1.5 mm height.

Maximum gate-source voltage is ±20 V ensuring safe driving margins. Forward voltage is 700 mV, optimizing conduction efficiency. The product is new, RoHS compliant, but has no specific automotive standard certification. Explore more on MOSFET products by onsemi and similar semiconductor components in the Electronics & Electricals category at EnvMart.