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DiodesZetex High Voltage NPN Bipolar Transistor 3.5 A, 300 V, 4-Pin SOT-223 Package FZT857TA

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DiodesZetex High Voltage NPN Bipolar Transistor 3.5 A, 300 V, 4-Pin SOT-223 Package FZT857TA

Name: DiodesZetex High Voltage NPN Bipolar Transistor 3.5 A, 300 V, 4-Pin SOT-223 Package FZT857TA
Brand: DiodesZetex
SKU: 407651
Price: 1.06 USD
Availability: InStock

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Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.8mm
Length	6.55mm
Model	FZT857TA
Width	7.1mm
Mount Type	Surface
Series	FZT857
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Maximum Collector Emitter Voltage Vceo	300V
Minimum DC Current Gain hFE	15
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	350V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	3W
Maximum DC Collector Current Idc	3.5A
Transistor Configuration	Single
Maximum Transition Frequency ft	80MHz

Key Features

The transistor features a 4-pin SOT-223 surface-mount package for easy PCB integration.
It supports a maximum power dissipation of 3 watts, suitable for compact power circuits.
Offers a minimum dc current gain (hFE) of 15, ensuring reliable performance.
Rated for operation in extreme temperatures from -55°C to 150°C for harsh environments.
Includes AEC-Q101 automotive standard compliance, making it suitable for automotive applications.
Maximum transition frequency is 80 MHz, enabling high-speed switching.
The package dimensions are compact with height 1.8mm, length 6.55mm, and width 7.1mm.
Single transistor configuration with NPN polarity optimized for various power and switching applications.

Product Description

DiodesZetex FZT857TA bipolar transistor is a high voltage NPN transistor with a maximum collector current of 3.5 A and a collector-emitter voltage rating of 300 V. It is encapsulated in a 4-pin SOT-223 surface mount package, making it ideal for compact electronic circuits and reliable PCB assembly.

This transistor supports a maximum power dissipation of 3 watts and a maximum collector-base voltage of 350 V. It features a minimum dc current gain (hFE) of 15, providing ample gain for switching and amplifying signals in industrial, automotive, and power electronics applications.

The device operates reliably in extreme temperature ranges from -55°C to 150°C and meets the AEC-Q101 automotive standard, making it suitable for use in rigorous automotive electronic environments.

With a maximum transition frequency of 80 MHz, the FZT857TA transistor enables high-speed switching in power supply, motor control, and signal processing circuits. Its compact package dimensions (height 1.8mm, length 6.55mm, width 7.1mm) support efficient heat dissipation and circuit density.

The 4-pin SOT-223 package aids surface mount applications with secure mechanical and thermal properties. Single NPN transistor configuration ensures versatile usage in various discrete semiconductor circuits. The device's electrical characteristics make it suitable for power amplification, switching circuits, and automotive electronics.

Designed for use in industrial electronic components, automotive systems, power management, and discrete semiconductor uses.

Choose DiodesZetex FZT857TA transistor for high-voltage, reliable semiconductor performance in demanding industrial and automotive environments. Explore more Bipolar Transistors and related semiconductor products on EnvMart.