$2.65
$2.57
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel Enhancement MOSFET 20 A, 60 V, Surface Mount SuperSO8 5 x 6 IPG20N06S4L14AATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPG20N06S4L14AATMA1 |
| Mount Type | Surface Mount |
| Series | IPG20N06S4L-14A |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 13.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.3V |
Key Features
- Dual N-channel MOSFET in a compact SuperSO8 5 x 6 surface mount package.
- Maximum continuous drain current of 20 A with a low RDS(on) of 13.7 mΩ.
- Enhancement mode device supporting a maximum gate source voltage of ±16 V.
- Typical gate charge of 39 nC at standard testing conditions enables efficient switching.
- Maximum power dissipation of 50 W allows thermal robustness in operation.
- Wide operating temperature range from -55°C to 175°C for automotive-grade reliability.
- AEC-Q101 automotive qualified for high reliability in automotive applications.
- RoHS compliant and 100% avalanche tested ensuring environmental and quality standards.
Product Description
The Infineon IPG20N06S4L14AATMA1 is a high-performance dual N-channel enhancement mode MOSFET designed for automotive and industrial applications requiring efficient power switching.
This MOSFET is housed in a compact 8-pin SuperSO8 5 x 6 surface mount package, optimizing board space and thermal management.
It features a maximum continuous drain current of 20 A and supports up to 60 V drain-source voltage, making it ideal for various power electronics, motor control, and switching power supply applications.
The device operates reliably in a wide temperature range from -55°C up to 175°C, aligning with automotive standards such as AEC-Q101. Its low on-state resistance (RDS(on)) of 13.7 mΩ minimizes conduction losses, improving overall efficiency.
Additionally, the typical gate charge of 39 nC ensures rapid switching capability, which is essential for high-frequency applications. The maximum gate-source voltage rating of ±16 V provides robust gate drive tolerance.
This product is RoHS compliant, reinforcing environmental safety and sustainability policies. Moreover, it has undergone 100% avalanche testing to verify its ruggedness under inductive load conditions.
It is also designed to be compatible with automatic optical inspection (AOI) processes, facilitating quality control and assembly automation.
Infineon's OptiMOS™-T2 technology embedded in this MOSFET offers enhanced electrical performance, efficiency, and reliability for demanding applications in industrial, automotive, and power management sectors.
Dual N-channel MOSFET in SuperSO8 5 x 6 surface mount package. Low on-resistance and high current handling capacity up to 20 A. High voltage rating of 60 V suitable for automotive and industrial power electronics. Wide operating temperature range compliant with automotive standards.
Efficient switching with low typical gate charge of 39 nC. RoHS compliant and 100% avalanche tested for quality assurance. Compatible with automated optical inspection techniques. AEC-Q101 qualified ensuring automotive reliability and robustness.
Explore EnvMart's comprehensive range of semiconductor devices and power MOSFETs tailored for applications in automotive, industrial, and power electronics sectors.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
This MOSFET supports a maximum drain-source voltage of 60 V.
It has a low on-state resistance (RDS(on)) of 13.7 mΩ, which minimizes conduction losses.
The typical gate charge at standard testing conditions is 39 nC.
It operates reliably within a wide temperature range from -55°C to 175°C.
This model is housed in a compact SuperSO8 5 x 6 surface mount package.
It is AEC-Q101 qualified, ensuring high reliability for automotive applications.
The maximum power dissipation for this MOSFET is 50 W.
The maximum gate-source voltage rating is ±16 V.
This model features 8 pins.
Yes, this device is RoHS compliant, meeting environmental safety standards.
It is suitable for automotive and industrial applications requiring efficient power switching.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$2.65
$2.57
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent