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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC014N06NSSCATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 DSC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
The Infineon BSC014N06NSSCATMA1 is a robust N-Channel MOSFET optimized for demanding high-current power switching applications in surface-mount packages. It features a maximum continuous drain current of 381 A and a voltage rating of 100 V, making it ideal for power conversion, motor drive stages, and high-load switching circuits.
Its low on-resistance of 0.7 mΩ minimizes conduction losses, while the 81 W maximum power dissipation allows sustained operation under heavy loads. The device maintains stable performance in a wide operating temperature range from -55°C to 175°C, accommodating harsh industrial and commercial environments.
The MOSFET comes in a compact 8-pin SuperSO8 5 x 6 DSC package, optimized for surface-mount board assembly and space-saving designs. Its typical gate charge of 80 nC facilitates efficient switching, and the gate-source voltage tolerance of up to 20 V allows for substantial drive voltages in control applications.
With a forward voltage of 1 V, this MOSFET provides predictable conduction losses essential for system efficiency calculations. The device complies with RoHS standards, ensuring it meets environmental safety and sustainability regulations.
Maximum continuous drain current 381 A. Maximum drain-source voltage 100 V. Low on-resistance (Rds) of 0.7 mΩ. Maximum power dissipation of 81 W. Surface-mount 8-pin SuperSO8 5 x 6 DSC package. Operating temperature range from -55°C to 175°C.
Typical gate charge 80 nC. Maximum gate-source voltage 20 V. Forward voltage drop of 1 V. RoHS compliant.
This MOSFET is well suited for use in industrial motor drives, DC-DC converter output switches, battery management systems, server power distribution modules, and other high-performance electronic applications requiring efficient, high-current switching. It is designed for compact surface-mount assemblies requiring reliable and efficient power management solutions.
Explore the Electronics & Electricals category at EnvMart for a comprehensive range of semiconductors and MOSFETs designed to meet advanced industrial requirements.
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