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Infineon IPD Type P-Channel MOSFET, 13.9 A, 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD18DP10LMATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13.9A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 178mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | -42nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Offers low RDS(on) of 178 milliohm for reduced conduction losses.
- Features an enhancement mode operation for controlled switching.
- Maximum power dissipation rating of 83 W ensures robust performance.
- Suitable for battery management, load switching, and reverse polarity protection systems.
- Fast switching characteristics with typical gate charge of -42 nC at Vgs.
- Wide operating temperature range from -55°C to 175°C for diverse environments.
- Compact TO-252 surface mount package with 3 pins supports automated assembly.
- Designed for easy MCU interfacing and low design complexity in medium and low power applications.
Product Description
Infineon IPD18DP10LMATMA1 P-Channel MOSFET with a maximum continuous drain current of 13.9 amperes and a drain-source voltage rating of 100 volts is packaged in a compact TO-252 format optimized for surface mounting.
This enhancement mode MOSFET is built for battery management solutions, industrial automation, and load switching applications requiring efficient power control and reverse polarity protection. Its low on-resistance of 178 milliohms and maximum power dissipation of 83 watts ensure effective operation with minimal thermal losses.
The device operates reliably over an extended temperature range from -55°C to 175°C, facilitating use in rugged industrial and automotive environments. Its typical gate charge of -42 nC at gate-source voltage offers fast switching capabilities, reducing switching losses and improving overall efficiency.
The TO-252 3-pin package supports automated PCB assembly and provides an easy interface with microcontroller units (MCUs), simplifying circuit integration while lowering design complexity in medium and low power systems.
With avalanche ruggedness and a robust surface mount package, this MOSFET offers high reliability and long life in power switching roles. Low RDS(on) for reduced conduction losses. Fast switching speed with low gate charge.
Wide operating temperature range. Ideal for battery management and industrial automation. Compact surface mount package for automated assembly. High power dissipation capability ensures reliable operation. Enhancement mode operation for efficient switching.
Avalanche ruggedness for high reliability. Easy MCU interface reduces design complexity.
This Infineon MOSFET is a reliable component for discrete semiconductor needs in electronics and electrical industries, suited for industrial, automotive, and commercial applications.
Explore more quality MOSFETs and semiconductor components within the Electronics & Electricals category on EnvMart for your industrial and commercial projects.
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Frequently Asked Questions
The maximum continuous drain current of this model is 13.9 amperes.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
It features a low on-resistance of 178 milliohms, which helps reduce conduction losses.
The maximum power dissipation rating for this unit is 83 watts, ensuring robust performance.
The typical gate charge at Vgs is -42 nC, providing fast switching capabilities.
It operates reliably over a wide temperature range from -55°C to 175°C.
This model is packaged in a compact TO-252 format optimized for surface mounting.
It has a total of 3 pins.
It is suitable for battery management, load switching, and reverse polarity protection systems.
The channel mode of this device is enhancement mode, allowing for controlled switching.
The forward voltage is -1.2V.
It supports surface mounting, which is suitable for automated assembly.
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